3N205 datasheet(1/2 Pages) DIGITRON

部件名	3N205

功能描述	DUAL GATE MOSFET

Download	2 Pages

Scroll/Zoom	100%

制造商	DIGITRON [Digitron Semiconductors]

网页	http://www.digitroncorp.com

标志

1 / 2 page

DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

3N204-3N205

DUAL GATE MOSFET

MAXIMUM RATINGS

RATING

SYMBOL

VALUE

UNIT

Drain-Source Voltage

VDS

25

Vdc

Drain-Gate Voltage

VDG

30

Vdc

Drain Current

lD

50

mA

Reverse Gate Current

lG

-10

mA

Forward Gate Current

lGF

10

mA

Total Device Dissipation @ TA=25°C

Derate above 25°C

PD

360

2.4

mW

mW/°C

Lead Temperature

TL

300

°C

Operating and Storage Junction Temperature Range

TJ, Tstg

-65 to +175

°C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

CHARACTERISTIC

SYMBOL

MIN

MAX

UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

(lD=10μA, VG1=VG2=-5.0V)

V(BR)DSX

25

-

Vdc

Gate 1-Source Breakdown Voltage

(lG1=+/- 10 mA) Note 1

V(BR)G1SO

+/-6

+/-30

Vdc

Gate 2-Source Breakdown Voltage

(lG2=+/-10mA) Note 1

V(BR)G2SO

+/-6

+/-30

Vdc

Gate 1 Leakage Current

(VG1S=+/-5.0V, VG2S=VDS=0)

lG1SS

-

+/-10

nA

Gate 2 Leakage Current

(VG2S=+/-5.0V, VG1S=VDS=0)

lG2SS

-

+/-10

nA

Gate 1 to Source Cutoff Voltage

(VDS=15V, VG2S=4.0V, lD=20μA)

VG1S(off)

-0.5

-4.0

Vdc

Gate 2 to Source Cutoff Voltage

(VDS=15V, VG1S=0V, lD=20μA)

VG2S(off)

-0.2

-4.0

Vdc

ON CHARACTERISTICS

Zero-Gate-Voltage Drain Current *

(VDS=15V, VG2S=4.0V, VG1S=0V)

lDSS*

6

30

mA

SMALL SIGNAL CHARACTERISTICS

Forward Transfer Admittance

(VDS=15V, VG2S=4.0V, VG1S=0V, f=1.0kHz) Note 2

│Yfs│

10

22

mmhos

Input Capacitance

(VDS=15V, VG2S=4.0V, lD=lDSS, f=1.0Mhz)

Ciss

TYP.3.0

pF

Reverse Transfer Capacitance

(VDS=15V, VG2S=4.0V, lD=10mA, f=1.0MHz)

Crss

0.005

0.03

pF

Output Capacitance

(VDS=15V, VG2S=4.0V, lD=lDSS, f=1.0MHz)

Coss

TYP. 1.4

pF

FUNCTIONAL CHARACTERISTICS

Noise Figure

(VDD=18V, VGG=7.0V, f=200MHz)

3N204

(VDS=15V, VG2S=4.0v, lD=10mA, f=450MHZ)

3N204

NF

-

3.5

5.0

dB

Common Source Power Gain

(VDD=18V, VGG=7.0V, f=200MHz)

3N204

(VDS=15V, VG2S=4.0V, lD=10mA, f=450MHz)

3N204

Gps

20

14

28

-

dB

Bandwidth

(VDD=18V, VGG=7.0V, f=200MHz)

3N204

(VDD=18V, fLO=245MHz, fRF=200MHz)Note 4

3N205

BW

7.0

4.0

12

7.0

MHz

Gain Control Gate Supply Voltage(Note 3)

(VDD=18V,

GPS=300dB,f=200MHz)

3N204

VGG(GC)

0

-2.0

Vdc

Conversion Gain (Note 4)

(VDD=18V, fLO=245MHz, fRF=200MHz)

3N205

G(conv.)

17

28

dB

*PW=30μs, Duty Cycle ≤ 2.0%.

1) All gate breakdown voltages are measured while the device is conducting rated gate current. This insures that the gate voltage limiting network is functioning properly.

2) This parameter must be measured with bias voltages applied for less than five (5) seconds to avoid overheating.

3)

Gps is defined as the change in Gps from the value at VGG=7.0V.

4) Amplitude at input from local oscillator is 3 volts RMS.

sales@digitroncorp.com

fax +1.908.245-0555

www.digitroncorp.com

Rev. 20120705

类似零件编号 - 3N205

制造商	部件名	数据表	功能描述
Motorola, Inc	3N205	399Kb / 7P	6367254 MOTOROLA SC (XSTRS/R F)
GE Solid State	3N205	363Kb / 8P	Silicon Dual Insulated-Gate Field-Effect Transistors
New Jersey Semi-Conduct...	3N205	165Kb / 1P	DUAL-GATE MOSFET
American Microsemicondu...	3N205	116Kb / 1P	Electrical Specifications at 25oC

More results

类似说明 - 3N205

制造商	部件名	数据表	功能描述
New Jersey Semi-Conduct...	3N200	88Kb / 1P	DUAL-GATE MOSFET
	3N204	165Kb / 1P	DUAL-GATE MOSFET
	40673	87Kb / 1P	DUAL-GATE MOSFET
	40673	87Kb / 1P	DUAL-GATE MOSFET
	MFE140	106Kb / 2P	DUAL-GATE MOSFET DUAL-GATE FM AMPLIFIER
Quanzhou Jinmei Electro...	BF1206F_2015	213Kb / 17P	Dual N-channel dual gate MOSFET
Quanzhou Jinmei Electro...	BF1208	175Kb / 22P	Dual N-channel dual gate MOSFET
Tachyonics CO,. LTD	TMF3201J	210Kb / 8P	Dual N-Channel Dual-Gate MOSFET
NXP Semiconductors	BF1208	167Kb / 22P	Dual N-channel dual gate MOSFET Rev. 01-16 March 2005
Quanzhou Jinmei Electro...	BF1208_2015	175Kb / 22P	Dual N-channel dual gate MOSFET