3N212 datasheet(1/2 Pages) DIGITRON

部件名	3N212

功能描述	DUAL-GATE VHF AMPLIFIER DUAL-GATE VHF AMPLIFIER

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制造商	DIGITRON [Digitron Semiconductors]

网页	http://www.digitroncorp.com

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DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

3N211-3N213

DUAL-GATE VHF AMPLIFIER

N-CHANNEL - DEPLETION

MAXIMUM RATINGS

Rating

Symbol

3N211

3N212

3N213

Unit

Drain Source Voltage

VDS

27

35

Vdc

Drain Gate Voltage

VDG1

VDG2

35

40

Vdc

Drain Current

ID

50

mAdc

Gate Current

IG1

IG2

±10

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

PD

360

2.4

mW

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD

1.2

8.0

Watt

mW/°C

Lead Temperature, 1/16” from Seated Surface for 10 seconds

TL

300

°C

Junction Temperature Range

TJ

-65 to +175

°C

Storage Temperature Range

Tstg

-65 to +175

°C

ELECTRICAL CHARACTERISTICS (TA = 25° unless otherwise noted)

Characteristics

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Drain Source Breakdown Voltage (1)

(ID = 10 µAdc, VG1S = VG2S = -4.0 Vdc)

3N211, 3N212

3N213

V(BR)DSX

25

30

-

Vdc

Instantaneous Drain Source Breakdown Voltage

(ID = 10 µAdc, VG1S = VG2S = -4.0 Vdc)

3N211, 3N212

3N213

V(BR)DSX

27

35

-

Vdc

Gate 1 – Source Breakdown Voltage (2)

(IG1 = ±10 mAdc, VG2S = VDS = 0)

V(BR)G1SO

±6.0

-

Vdc

Gate 2 – Source Breakdown Voltage (2)

(IG2 = ±10 mAdc, VG1S = VDS = 0)

V(BR)G2SO

±6.0

-

Vdc

Gate 1 Leakage Current

(VG1S = ±5.0 Vdc, VG2S = VDS = 0)

(VG1S = -5.0 Vdc, VG2S = VDS = 0, TA = 150°C)

IG1SS

-

±10

-10

nAdc

µAdc

Gate 2 Leakage Current

(VG2S = ±5.0 Vdc, VG1S = VDS = 0)

(VG2S = -5.0 Vdc, VG1S = VDS = 0, TA = 150°C)

IG2SS

-

±10

-10

nAdc

µAdc

Gate 1 to Source Cutoff Voltage

(VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = 20 µ Adc)

3N211, 3N213

3N212

VG1S(off)

-0.5

-5.5

-4.0

Vdc

Gate 2 Source to Cutoff Voltage

(VDS = 15 Vdc, VG1S = 0, ID = 20 µAdc)

3N211

3N212, 3N213

VG2S(off)

-0.2

-2.5

-4.0

Vdc

ON CHARACTERISTICS

Zero Gate Voltage Drain Current (3)

(VDS = 15 Vdc, VG1S = 0, VG2S = 4.0 Vdc)

IDSS

6.0

40

mAdc

SMALL SIGNAL CHARACTERISTICS

Forward Transfer Admittance (4)

(VDS = 15 Vdc, VG2S = 4.0 Vdc, VG1S = 0, f = 1.0 kHz)

3N211, 3N212

3N213

⎪yfs⎪

17

15

40

35

mmhos

Reverse Transfer Capacitance

(VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = 1.0 mAdc, f = 1.0 MHz)

Crss

0.005

0.05

pF

FUNCTIONAL CHARACTERISTICS

Noise Figure

(VDD = 18 Vdc, VGG = 7.0 Vdc, f = 200 MHz)

(VDD = 24 Vdc, VGG =6.0 Vdc, f = 45 MHz)

3N211

3N211, 3N213

NF

-

3.5

4.0

dB

sales@digitroncorp.com

fax +1.908.245-0555

www.digitroncorp.com

Rev. 20120706

类似零件编号 - 3N212

制造商	部件名	数据表	功能描述
Motorola, Inc	3N212	69Kb / 2P	Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion)
New Jersey Semi-Conduct...	3N212	149Kb / 1P	DUAL-GATE MOSFET VHF AMPLIFIER
American Microsemicondu...	3N212	116Kb / 1P	Discrete Semiconductors

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类似说明 - 3N212

制造商	部件名	数据表	功能描述
Motorola, Inc	3N201	195Kb / 5P	DUAL GATE MOSFET VHF AMPLIFIER
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