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3N212 数据表(PDF) 1 Page - Digitron Semiconductors |
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3N212 数据表(HTML) 1 Page - Digitron Semiconductors |
1 / 2 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 3N211-3N213 DUAL-GATE VHF AMPLIFIER N-CHANNEL - DEPLETION MAXIMUM RATINGS Rating Symbol 3N211 3N212 3N213 Unit Drain Source Voltage VDS 27 35 Vdc Drain Gate Voltage VDG1 VDG2 35 35 40 40 Vdc Drain Current ID 50 mAdc Gate Current IG1 IG2 ±10 ±10 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 360 2.4 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.2 8.0 Watt mW/°C Lead Temperature, 1/16” from Seated Surface for 10 seconds TL 300 °C Junction Temperature Range TJ -65 to +175 °C Storage Temperature Range Tstg -65 to +175 °C ELECTRICAL CHARACTERISTICS (TA = 25° unless otherwise noted) Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Drain Source Breakdown Voltage (1) (ID = 10 µAdc, VG1S = VG2S = -4.0 Vdc) 3N211, 3N212 3N213 V(BR)DSX 25 30 - - Vdc Instantaneous Drain Source Breakdown Voltage (ID = 10 µAdc, VG1S = VG2S = -4.0 Vdc) 3N211, 3N212 3N213 V(BR)DSX 27 35 - - Vdc Gate 1 – Source Breakdown Voltage (2) (IG1 = ±10 mAdc, VG2S = VDS = 0) V(BR)G1SO ±6.0 - Vdc Gate 2 – Source Breakdown Voltage (2) (IG2 = ±10 mAdc, VG1S = VDS = 0) V(BR)G2SO ±6.0 - Vdc Gate 1 Leakage Current (VG1S = ±5.0 Vdc, VG2S = VDS = 0) (VG1S = -5.0 Vdc, VG2S = VDS = 0, TA = 150°C) IG1SS - - ±10 -10 nAdc µAdc Gate 2 Leakage Current (VG2S = ±5.0 Vdc, VG1S = VDS = 0) (VG2S = -5.0 Vdc, VG1S = VDS = 0, TA = 150°C) IG2SS - - ±10 -10 nAdc µAdc Gate 1 to Source Cutoff Voltage (VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = 20 µ Adc) 3N211, 3N213 3N212 VG1S(off) -0.5 -0.5 -5.5 -4.0 Vdc Gate 2 Source to Cutoff Voltage (VDS = 15 Vdc, VG1S = 0, ID = 20 µAdc) 3N211 3N212, 3N213 VG2S(off) -0.2 -0.2 -2.5 -4.0 Vdc ON CHARACTERISTICS Zero Gate Voltage Drain Current (3) (VDS = 15 Vdc, VG1S = 0, VG2S = 4.0 Vdc) IDSS 6.0 40 mAdc SMALL SIGNAL CHARACTERISTICS Forward Transfer Admittance (4) (VDS = 15 Vdc, VG2S = 4.0 Vdc, VG1S = 0, f = 1.0 kHz) 3N211, 3N212 3N213 ⎪yfs⎪ 17 15 40 35 mmhos Reverse Transfer Capacitance (VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = 1.0 mAdc, f = 1.0 MHz) Crss 0.005 0.05 pF FUNCTIONAL CHARACTERISTICS Noise Figure (VDD = 18 Vdc, VGG = 7.0 Vdc, f = 200 MHz) (VDD = 24 Vdc, VGG =6.0 Vdc, f = 45 MHz) 3N211 3N211, 3N213 NF - - 3.5 4.0 dB sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20120706 |
类似零件编号 - 3N212 |
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类似说明 - 3N212 |
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