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IRF8714GTRPBF 数据表(PDF) 1 Page - International Rectifier

部件名 IRF8714GTRPBF
功能描述  Control MOSFET of Sync-Buck Converters used for Notebook Processor Power
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF8714GTRPBF 数据表(HTML) 1 Page - International Rectifier

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www.irf.com
1
07/10/09
IRF8714GPbF
HEXFET® Power MOSFET
Notes
 through … are on page 9
Benefits
l Very Low Gate Charge
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% tested for Rg
l Lead-Free
l Halogen-Free
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook
Processor Power
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
SO-8
Description
The IRF8714GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8714GPbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for Notebook and Netcom applications.
VDSS
RDS(on) max
Qg
30V
8.7m:@VGS = 10V 8.1nC
PD - 96263
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Power Dissipation
PD @TA = 70°C
Power Dissipation
Linear Derating Factor
W/°C
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
g
–––
20
RθJA
Junction-to-Ambient
f
–––
50
V
W
°C/W
°C
-55 to + 150
2.5
0.02
1.6
Max.
14
11
110
± 20
30


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