MAXIMUM RATINGS (TA=25°C)

BCX51

BCX52

BCX53

UNITS

Collector-Base Voltage

VCBO

45

60

100

V

Collector-Emitter Voltage

VCEO

45

60

80

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current

IC

1.0

A

Peak Collector Current

ICM

1.5

A

Base Current

IB

100

mA

Peak Base Current

IBM

200

mA

Power Dissipation

PD

1.2

W

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

104

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=30V

100

nA

ICBO

VCB=30V, TA=125°C

10

µA

IEBO

VEB=5.0V

100

nA

BVCBO

IC=100µA (BCX51)

45

V

BVCBO

IC=100µA (BCX52)

60

V

BVCBO

IC=100µA (BCX53)

100

V

BVCEO

IC=10mA (BCX51)

45

V

BVCEO

IC=10mA (BCX52)

60

V

BVCEO

IC=10mA (BCX53)

80

V

VCE(SAT)

IC=500mA, IB=50mA

0.5

V

VBE(ON)

VCE=2.0V, IB=500mA

1.0

V

hFE

VCE=2.0V, IC=5.0mA

63

hFE

VCE=2.0V, IC=150mA

63

250

hFE

VCE=2.0V, IC=150mA

(BCX51-10, BCX52-10, BCX53-10)

63

160

hFE

VCE=2.0V, IC=150mA

(BCX51-16, BCX52-16, BCX53-16)

100

250

hFE

VCE=2.0V, IC=500mA

40

fT

VCE=5.0V, IC=10mA, f=100MHz

50

MHz

BCX51

BCX52

BCX53

SURFACE MOUNT

PNP SILICON TRANSISTOR

SOT-89 CASE

Central

Semiconductor Corp.

TM

R1 ( 18-December 2001)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCX51,

BCX52, and BCX53 types are PNP Silicon

Transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for high current general

purpose amplifier applications.