FIGURE 1

DESIGN DATA

CASE: Hermetically sealed glass

case. DO – 35 outline.

LEAD MATERIAL: Copper clad steel.

LEAD FINISH: Tin / Lead

THERMAL RESISTANCE: (ROJEC):

250 ˚C/W maximum

THERMAL IMPEDANCE: (ZOJX): 70

˚C/W maximum

POLARITY: Cathode end is banded.

MOUNTING POSITION: ANY.

22 COREY STREET, MELROSE, MASSACHUSETTS 02176

PHONE (781) 665-1071

FAX (781) 665-7379

WEBSITE: http://www.cdi-diodes.com

E-mail: mail@cdi-diodes.com

• AVAILABLE IN

PER MIL-PRF-19500/118

• GENERAL PURPOSE SILICON DIODES

• METALLURGICALLY BONDED

1N5194

1N5195

1N5196

ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified

MAXIMUM RATINGS

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Operating Current: 200 mA

Derating: 1.2 mA/°C From 25°C to 150°C

1.0 mA/°C From 150°C to 175°C

Forward Current: 650 mA

TYPE

VRM

V RWM

I O

I O

I FSM

TA = 150°C

TP = 1/120 s

TA = 25°C

V (pk)

V (pk)

mA

mA

A

1N5194

80

70

200

50

2

1N5195

180

180

200

50

2

1N5196

250

225

200

50

2

TYPE

VF

I R1 at V RWM I R2 at V RM

I R3 at V RWM

@100mA

TA = 25°C

TA = 25°C

TA = 150°C

V dc

nA dc

µA

µA dc

1N5194

0.8 - 1.0

25

100

5

1N5195

0.8 - 1.0

25

100

5

1N5196

0.8 - 1.0

25

100

5