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NE325S01-T1 数据表(PDF) 2 Page - California Eastern Labs |
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NE325S01-T1 数据表(HTML) 2 Page - California Eastern Labs |
2 / 5 page NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT Drain Current, ID (mA) NE325S01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 4.0 VGS Gate to Source Voltage V -3.0 ID Drain Current mA IDSS IG Gate Current µA 100 PT Total Power Dissipation mW 165 TCH Channel Temperature °C 125 Tstg Storage Temperature °C -65 to +125 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Ambient Temperature, TA (°C) TYPICAL PERFORMANCE CURVES (TA = 25°C) Note: 1. Operation in excess of any one of these parameters may result in permanent damage. DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE Frequency, f (GHz) Gate to Source Voltage, VGS (V) MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Drain to Source Voltage, VDS (V) 250 200 150 100 50 50 100 150 200 250 0 100 80 60 40 20 01.5 3.0 VGS = 0 V -0.2 V -0.4 V -0.6 V -0.8 V 60 40 20 0 -2.0 -1.0 0 VDS = 2 V 24 20 16 12 8 4 12 4 6 8 10 14 20 30 IS21sl MSG. MAG. VDS = 2 V ID = 10 mA 2 VDS = 2V f = 12 GHz Ga NF 0 0.5 1.0 1.5 2.0 14 13 12 11 10 10 20 30 |
类似零件编号 - NE325S01-T1 |
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类似说明 - NE325S01-T1 |
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