数据搜索系统,热门电子元器件搜索
Selected language     Chinese  ▼
部分名称
         详细搜索


IRF6710S2TR1PBF Datasheet(数据表) 2 Page - International Rectifier

部件型号  IRF6710S2TR1PBF
说明  DirectFET Power MOSFET
下载  10 Pages
Scroll/Zoom Zoom In 100% Zoom Out
制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 

 
 2 page
background image
IRF6710S2TR/TR1PbF
2
www.irf.com
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
25
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
17
––– mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
4.5
5.9
m
–––
9.0
11.9
VGS(th)
Gate Threshold Voltage
1.4
1.8
2.4
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-7.0
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
21
–––
–––
S
Qg
Total Gate Charge
–––
8.8
13
Qgs1
Pre-Vth Gate-to-Source Charge
–––
2.3
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.3
–––
nC
Qgd
Gate-to-Drain Charge
–––
3.0
–––
Qgodr
Gate Charge Overdrive
–––
2.2
–––
See Fig. 15
Qsw
Switch Charge (Qgs2 + Qgd)
–––
4.3
–––
Qoss
Output Charge
–––
4.4
–––
nC
RG
Gate Resistance
–––
0.3
td(on)
Turn-On Delay Time
–––
7.9
–––
tr
Rise Time
–––
20
–––
td(off)
Turn-Off Delay Time
–––
5.2
–––
ns
tf
Fall Time
–––
6.0
–––
Ciss
Input Capacitance
–––
1190
–––
Coss
Output Capacitance
–––
320
–––
pF
Crss
Reverse Transfer Capacitance
–––
150
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
19
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
100
(Body Diode)Ãg
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
14
21
ns
Qrr
Reverse Recovery Charge
–––
8.0
12
nC
MOSFET symbol
RG= 6.2Ω
VDS = 15V, ID =10A
Conditions
ƒ = 1.0MHz
VDS = 10V, VGS = 0V
VGS = 20V
VGS = -20V
VDS = 20V, VGS = 0V
VDS = 13V
VDS = 20V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A i
VGS = 4.5V, ID = 10A i
VDS = VGS, ID = 25µA
TJ = 25°C, IF =10A
VGS = 4.5V
ID = 10A
VGS = 0V
VDS = 13V
ID = 10A
VDD = 13V, VGS = 4.5VÃi
di/dt = 200A/µs i
TJ = 25°C, IS = 10A, VGS = 0V i
showing the
integral reverse
p-n junction diode.




HTML 页

1  2  3  4  5  6  7  8  9  10 


数据表 下载




链接网址

ALLDATASHEET是否为您带来帮助?  [ DONATE ]  

关于 Alldatasheet    |   广告服务   |   联系我们   |   隐私政策   |   书签   |   链接交换   |   制造商名单
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl