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IT1700 数据表(PDF) 2 Page - Calogic, LLC |
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IT1700 数据表(HTML) 2 Page - Calogic, LLC |
2 / 2 page ELECTRICAL CHARACTERISTICS (TA = 25 oC and VBS = 0 unless otherwise specified) SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS BVDSS Drain to Source Breakdown Voltage -40 V VGS = 0, ID = -10 µA BVSDS Source to Drain Breakdown Voltage -40 V VGS = 0, ID = -10 µA IGSS Gate Leakage Current (See note 2) IDSS Drain to Source Leakage Current 200 pA VGS = 0, VDS = -20V IDSS (150 oC) Drain to Source Leakage Current 0.4 µA ISDS Source to Drain Leakage Current 400 pA ISDS (150 oC) Source to Drain Leakage Current 0.8 µA VGS(th) Gate Threshold Voltage -2 -5 V VGS = VDS, ID = -10 µA rDS(on) Static Drain to Source "on" Resistance 400 ohms VGS = -10V, VDS = 0 IDS(on) Drain to Source "on" Current 2 mA VGS = -10V, VDS = -15V gfs Forward Transconductance Common Source 2000 4000 µSVDS = -15V, ID = -10mA, f = 1kHz Ciss Small Signal, Short Circuit, Common Source, Input Capacitance 5pF VDS = -15V, ID = -10mA f = 1MHz (Note 3) Crss Small Signal, Short Circuit, Common Source, Reverse Transfer Capacitance 1.2 pF VDG = -15V, ID = 0 f = 1MHz (Note 3) Coss Small Signal, Short Circuit, Common Source, Output Capacitance 3.5 pF VDS = -15V, ID = -10mA f = 1MHz (Note 3) NOTES: 1. Device must not be tested at ±125V more than once nor longer than 300ms. 2. Actual gate current is immeasurable. Package suppliers are required to guarantee a package leakage of < 10pA. External package leakage is the dominant mode which is sensitive to both transient and storage environment, which cannot be guaranteed. 3. For design reference only, not 100% tested. IT1700 CORPORATION |
类似说明 - IT1700 |
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