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FQA10N80C-F109 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FQA10N80C-F109 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page ©2006 Fairchild Semiconductor Corporation FQA10N80C_F109 Rev. C1 www.fairchildsemi.com 3 Typical Characteristics 0 5 10 15 20 25 30 0.5 1.0 1.5 2.0 2.5 V GS = 20V V GS = 10V ※ Note: T J = 25℃ I D, Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150℃ ※ Notes : 1. V GS = 0V 2. 250μs PulseTest 25℃ V SD, Source-Drain voltage [V] 0 1020 304050 0 2 4 6 8 10 12 V DS = 400V V DS = 160V V DS = 640V ※ Note: I D = 10A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 10 -1 10 0 10 1 V GS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V Bottom: 5.5V ※ Notes : 1. 250μsPulseTest 2. T C = 25℃ V DS, Drain-Source Voltage [V] 24 6 8 10 10 -1 10 0 10 1 150 oC 25 oC -55 oC ※ Notes : 1. V DS = 50V 2. 250μs PulseTest V GS, Gate-Source Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 3500 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes : 1. V GS = 0 V 2. f =1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] |
类似零件编号 - FQA10N80C-F109 |
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类似说明 - FQA10N80C-F109 |
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