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2N4351 Datasheet(数据表) 1 Page - Calogic, LLC

部件型号  2N4351
说明  N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
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制造商  CALOGIC [Calogic, LLC]
网页  http://www.calogic.net
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2N4351 Datasheet(HTML) 1 Page - Calogic, LLC

   
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N-Channel Enhancement Mode
MOSFET General Purpose
Amplifier/Switch
2N4351
FEATURES
•• Low ON Resistance
•• Low Capacitance
•• High Gain
•• High Gate Breakdown Voltage
•• Low Threshold Voltage
ABSOLUTE MAXIMUM RATINGS
(TA = 25
oC unless otherwise noted)
Drain-Source Voltage or Drain-Body Voltage . . . . . . . . . . 25V
Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . .
±125V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Storage Temperature Range . . . . . . . . . . . . . -65
oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55
oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . 3mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
2N4351
Hermetic TO-72
-55
oC to +150oC
X2N4351
Sorted Chips in Carriers
-55
oC to +150oC
CORPORATION
PIN CONFIGURATION
TO-72
G
D
C
S
ELECTRICAL CHARACTERISTICS (TA = 25
oC unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
BVDSS
Drain-Source Breakdown Voltage
25
V
ID = 10
µA, VGS = 0
IGSS
Gate Leakage Current
10
pA
VGS =
±30V, VDS = 0
IDSS
Zero-Gate-Voltage Drain Current
10
nA
VDS = 10V, VGS = 0
VGS(th)
Gate-Source Threshold Voltage
1
5
V
VDS = 10V, ID = 10
µA
ID(on)
"ON" Drain Current
3
mA
VGS = 10V, VDS = 10V
VDS(on)
Drain-Source "ON" Voltage
1
V
ID = 2mA, VGS = 10V
rDS(on)
Drain-Source Resistance
300
ohms
VGS = 10V, ID = 0, f = 1kHz
| yfs |
Forward Transfer Admittance
1000
µSVDS = 10V, ID = 2mA, f = 1kHz
Crss
Reverse Transfer Capacitance (Note 2)
1.3
pF
VDS = 0, VGS = 0, f = 1MHz
Ciss
Input Capacitance (Note 2)
5.0
VDS = 10V, VGS = 0, f = 1MHz
Cd(sub)
Drain-Substrate Capacitance (Note 2)
5.0
VD(SUB) = 10V, f = 1MHz
td(on)
Turn-On Delay (Note 2)
45
ns
tr
Rise Time (Note 2)
65
td(off)
Turn-Off Delay (Note 2)
60
tf
Fall Time (Note 2)
100
NOTES: 1. Device must not be tested at
±125V more than once or longer than 300ms.
2. For design reference only, not 100% tested.
1003




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