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IRF6811STRPBF 数据表(PDF) 1 Page - International Rectifier |
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IRF6811STRPBF 数据表(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 01/28/11 Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.28mH, RG = 50Ω, IAS = 15A. Notes: IRF6811SPbF IRF6811STRPbF DirectFET® plus Power MOSFET Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Typical values (unless otherwise specified) SQ SX ST MQ MX MT MP Description The IRF6811STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech- niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6811STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6811STRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters. l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques l 100% Rg tested l Footprint compatible to DirectFET ISOMETRIC SQ 0 5 10 15 20 25 30 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 VDS= 20V VDS= 13V VDS= 5.0V ID= 15A VDSS VGS RDS(on) RDS(on) 25V max ±16V max 2.8mΩ @ 10V 4.1mΩ @ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 11nC 4.2nC 1.4nC 23nC 11nC 1.6V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A Max. 15 74 150 ±16 25 19 32 15 V A 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VGS, Gate -to -Source Voltage (V) 0 2 4 6 8 10 12 ID = 19A TJ = 25°C TJ = 125°C PD-97634 D G D S |
类似零件编号 - IRF6811STRPBF |
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类似说明 - IRF6811STRPBF |
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