BS616LV4011 datasheet(6/10 Pages) BSI

部件名	BS616LV4011

功能描述	Very Low Power/Voltage CMOS SRAM 256K X 16 bit

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制造商	BSI [Brilliance Semiconductor]

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Revision 2.4

April 2002

6

JEDEC

PARAMETER

NAME

PARAMETER

NAME

DESCRIPTION

BS616LV4011-70

MIN. TYP. MAX.

BS616LV4011-10

MIN. TYP. MAX.

UNIT

t

AVAX

Write Cycle Time

t

WC

70

--

100

--

ns

t

E1LWH

t

CW

Chip Select to End of Write

70

--

100

--

ns

t

AVWL

t

AS

Address Setup Time

0

--

0

--

ns

t

AVWH

t

AW

Address Valid to End of Write

70

--

100

--

ns

t

WLWH

t

WP

Write Pulse Width

35

--

50

--

ns

t

WHAX

t

WR1

Write recovery Time

(CE,WE)

0

--

0

--

ns

t

BW

t

BW

Date Byte Control to End of Write

(LB,U )

3

B

0

--

40

--

ns

t

WLQZ

t

WHZ

Write to Output in High Z

0--

30

0

--

40

ns

t

DVWH

t

DW

Data to Write Time Overlap

30

--

40

--

ns

t

WHDX

t

DH

Data Hold from Write Time

0

--

0

--

ns

t

GHQZ

t

OHZ

Output Disable to Output in High Z

0--

30

0

--

40

ns

t

WHOX

t

OW

End of Write to Output Active

5

----

10

----

ns

R0201-BS616LV4011

AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC , Vcc = 3.0V )

WRITE CYCLE

BSI

BS616LV4011

SWITCHING WAVEFORMS (WRITE CYCLE)

t WR

WRITE CYCLE1 (1)

t WC

(3)

t CW

(11)

t BW

(2)

t WP

t AW

t OHZ

(4,10)

t AS

(3)

t DH

t DW

D

IN

D

OUT

WE

LB,UB

CE

OE

ADDRESS

(5)

1. tBW is 30ns/40ns (@speed=70ns/100ns) with address toggle. ; tBW is 70ns/100ns (@speed=70ns/100ns) without address toggle.

NOTE :

(1)

类似零件编号 - BS616LV4011

制造商	部件名	数据表	功能描述
Brilliance Semiconducto...	BS616LV4010	227Kb / 10P	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
	BS616LV4010AC	227Kb / 10P	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
	BS616LV4010AI	227Kb / 10P	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
	BS616LV4010BC	227Kb / 10P	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
	BS616LV4010BI	227Kb / 10P	Very Low Power/Voltage CMOS SRAM 256K X 16 bit

More results

类似说明 - BS616LV4011

制造商	部件名	数据表	功能描述
Brilliance Semiconducto...	BS616LV4015	228Kb / 10P	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
List of Unclassifed Man...	BS616LV4018	265Kb / 10P	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
Brilliance Semiconducto...	BS616LV4016	265Kb / 10P	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
	BS616LV4010	227Kb / 10P	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
	BS616LV4017	265Kb / 10P	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
List of Unclassifed Man...	STC62WV25616	252Kb / 10P	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
Brilliance Semiconducto...	BS616LV4017	209Kb / 11P	Very Low Power CMOS SRAM 256K X 16 bit
	BS616LV4017	247Kb / 11P	Very Low Power CMOS SRAM 256K X 16 bit
	BS62LV2005	279Kb / 10P	Very Low Power/Voltage CMOS SRAM 256K X 8 bit
	BS62LV2006	321Kb / 9P	Very Low Power/Voltage CMOS SRAM 256K X 8 bit