1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

High Voltage Transistor

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

– 300

Vdc

Collector–Base Voltage

VCBO

–300

Vdc

Emitter–Base Voltage

VEBO

– 5.0

Vdc

Collector Current

IC

– 500

mAdc

Total Power Dissipation up to TA = 25°C(1)

PD

1.5

Watts

Storage Temperature Range

Tstg

– 65 to +150

°C

Junction Temperature

TJ

150

°C

DEVICE MARKING

P2D

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance from Junction to Ambient(1)

R

θJA

83.3

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)

V(BR)CEO

– 300

—

Vdc

Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0)

V(BR)CBO

– 300

—

Vdc

Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0)

V(BR)EBO

– 5.0

—

Vdc

Collector–Base Cutoff Current (VCB = – 200 Vdc, IE = 0)

ICBO

—

– 0.25

µAdc

Emitter–Base Cutoff Current (VBE = – 3.0 Vdc, IC = 0)

IEBO

—

– 0.1

µAdc

ON CHARACTERISTICS

DC Current Gain(2)

(IC = – 1.0 mAdc, VCE = – 10 Vdc)

(IC = –10 mAdc, VCE = – 10 Vdc)

(IC = – 30 mAdc, VCE = – 10 Vdc)

hFE

25

40

25

—

—

—

—

Saturation Voltages

(IC = –20 mAdc, IB = –2.0 mAdc)

(IC = –20 mAdc, IB = –2.0 mAdc)

VCE(sat)

VBE(sat)

—

—

– 0.5

– 0.9

Vdc

DYNAMIC CHARACTERISTICS

Collector–Base Capacitance @ f = 1.0 MHz (VCB = –20 Vdc, IE = 0)

Ccb

—

6.0

pF

Current–Gain — Bandwidth Product

(IC = –10 mAdc, VCE = – 20 Vdc, f = 100 MHz)

fT

50

—

MHz

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.

2. Pulse Test: Pulse Width

≤ 300 µs; Duty Cycle = 2.0%.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by PZTA92T1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

© Motorola, Inc. 1997

PZTA92T1

Motorola Preferred Device

CASE 318E–04, STYLE 1

TO–261AA

1

2

3

4

SOT–223 PACKAGE

PNP SILICON

HIGH VOLTAGE TRANSISTOR

SURFACE MOUNT

COLLECTOR 2,4

BASE

1

EMITTER 3

REV 2