BC807W datasheet(2/4 Pages) TSC

部件名	BC807W

功能描述	200mW, PNP Small Signal Transistor

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制造商	TSC [Taiwan Semiconductor Company, Ltd]

网页	http://www.taiwansemi.com

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BC807-16W/25W/40W

200mW, PNP Small Signal Transistor

Small Signal Diode

Electrical Characteristics

Units

Collector-Base Breakdown Voltage

at-Ic=10uA

V

Collector-Emitter Breakdown Voltage

at-Ic=10mA

V

at-Ic=10uA

V

nA

uA

at=VEB= 5V

nA

-16W

-25W

-40W

-

at-

Ic=500mA

IB= 50mA

V

VCE= 5V

IC= 10mA

f= 100MHz

MHz

Tape & Reel specification

Carrier width

Carrier length

Carrier depth

Sprocket hole

Reel outside diameter

Reel inner diameter

Feed hole width

Sprocke hole position

Punch hole position

Sprocke hole pitch

Embossment center

Overall tape thickness

Tape width

Reel width

0.229 ±0.013

Collector Cut-off Current

IEBO

-

Emitter Cut-off Current

Transition frequency

fT

100

5

13.0 ± 0.20

1.75 ±0.10

3.50 ±0.05

-

5

100

-

V(BR)CEO

V(BR)EBO

12.30 ±0.20

8.10 ±0.20

W

4.00 ±0.10

E

F

-

2.00 ±0.05

W1

P0

P1

80

-

T

D1

D2

55 Min

Item

Type Number

50

Symbol

V(BR)CBO

A

B

3.15 ±0.10

Min

Max

45

100

160

250

400

600

40

1.50 ± 0.10

0.7

178 ± 1

d

D

C

2.77 ±0.10

1.22 ±0.10

Symbol

Dimension(mm)

Emitter-Base Breakdown Voltage

Collector-Emitter saturation voltage

VCE(sat)

ICBO

at-VCE=1V,-Ic=100mA

at-VCE=1V,-Ic=500mA

DC Current Gain

hFE

at=VCB= 20V

at=VCB= 20V,TJ=150℃

W1

D1

D2

D

T

C

d

P1

P0

A

B

F

W

E

Direction of Feed

Top Cover Tape

Carieer Tape

Any Additional Label (If Required)

TSC label

Version : A11

类似零件编号 - BC807W

制造商	部件名	数据表	功能描述
NXP Semiconductors	BC807W	61Kb / 8P	PNP general purpose transistor 1999 May 18
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Foshan Blue Rocket Elec...	BC807W	842Kb / 6P	Silicon PNP transistor in a SOT-323 Plastic Package
Diotec Semiconductor	BC807W	174Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors

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类似说明 - BC807W

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