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SI7489DP-T1-E3 数据表(PDF) 2 Page - Vishay Siliconix |
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SI7489DP-T1-E3 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 73436 S09-0271-Rev. C, 16-Feb-09 Vishay Siliconix Si7489DP Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 100 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 113 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 5.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 100 V, VGS = 0 V - 1 µA VDS = - 100 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = - 10 V - 40 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 7.8 A 0.033 0.041 Ω VGS = - 4.5 V, ID = - 7.3 A 0.038 0.047 Forward Transconductancea gfs VDS = - 15 V, ID = - 7.8 A 38 S Dynamicb Input Capacitance Ciss VDS = - 50 V, VGS = 0 V, f = 1 MHz 4600 pF Output Capacitance Coss 230 Reverse Transfer Capacitance Crss 175 Total Gate Charge Qg VDS = - 50 V, VGS = - 10 V, ID = - 7.8 A 106 160 nC VDS = - 50 V, VGS = - 4.5 V, ID = - 7.8 A 54 81 Gate-Source Charge Qgs 14 Gate-Drain Charge Qgd 26 Gate Resistance Rg f = 1 MHz 4 Ω Turn-On Delay Time td(on) VDD = - 50 V, RL = 8.1 Ω ID ≅ - 6.2 A, VGEN = - 10 V, Rg = 1 Ω 15 25 ns Rise Time tr 20 30 Turn-Off Delay Time td(off) 110 165 Fall Time tf 100 150 Turn-On Delay Time td(on) VDD = - 50 V, RL = 8.1 Ω ID ≅ - 6.2 A, VGEN = - 4.5 V, Rg = 1 Ω 42 65 Rise Time tr 160 240 Turn-Off Delay Time td(off) 100 150 Fall Time tf 100 150 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 28 A Pulse Diode Forward Currenta ISM - 40 Body Diode Voltage VSD IS = - 6.2 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 6.2 A, dI/dt = 100 A/µs, TJ = 25 °C 60 90 ns Body Diode Reverse Recovery Charge Qrr 150 225 nC Reverse Recovery Fall Time ta 46 ns Reverse Recovery Rise Time tb 14 |
类似零件编号 - SI7489DP-T1-E3 |
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类似说明 - SI7489DP-T1-E3 |
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