SI7489DP-T1-E3 datasheet(2/9 Pages) VISHAY

部件名	SI7489DP-T1-E3

功能描述	P-Channel 100-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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Document Number: 73436

S09-0271-Rev. C, 16-Feb-09

Vishay Siliconix

Si7489DP

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 100

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = - 250 µA

- 113

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

5.5

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1

- 3

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 100 V, VGS = 0 V

- 1

µA

VDS = - 100 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = - 10 V

- 40

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V, ID = - 7.8 A

0.033

0.041

Ω

VGS = - 4.5 V, ID = - 7.3 A

0.038

0.047

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 7.8 A

38

S

Dynamicb

Input Capacitance

Ciss

VDS = - 50 V, VGS = 0 V, f = 1 MHz

4600

pF

Output Capacitance

Coss

230

Reverse Transfer Capacitance

Crss

175

Total Gate Charge

Qg

VDS = - 50 V, VGS = - 10 V, ID = - 7.8 A

106

160

nC

VDS = - 50 V, VGS = - 4.5 V, ID = - 7.8 A

54

81

Gate-Source Charge

Qgs

14

Gate-Drain Charge

Qgd

26

Gate Resistance

Rg

f = 1 MHz

4

Ω

Turn-On Delay Time

td(on)

VDD = - 50 V, RL = 8.1 Ω

ID ≅ - 6.2 A, VGEN = - 10 V, Rg = 1 Ω

15

25

ns

Rise Time

tr

20

30

Turn-Off Delay Time

td(off)

110

165

Fall Time

tf

100

150

Turn-On Delay Time

td(on)

VDD = - 50 V, RL = 8.1 Ω

ID ≅ - 6.2 A, VGEN = - 4.5 V, Rg = 1 Ω

42

65

Rise Time

tr

160

240

Turn-Off Delay Time

td(off)

100

150

Fall Time

tf

100

150

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

- 28

A

Pulse Diode Forward Currenta

ISM

- 40

Body Diode Voltage

VSD

IS = - 6.2 A

- 0.8

- 1.2

V

Body Diode Reverse Recovery Time

trr

IF = - 6.2 A, dI/dt = 100 A/µs, TJ = 25 °C

60

90

ns

Body Diode Reverse Recovery Charge

Qrr

150

225

nC

Reverse Recovery Fall Time

ta

46

ns

Reverse Recovery Rise Time

tb

14

类似零件编号 - SI7489DP-T1-E3

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Vishay Siliconix	SI7489DP	152Kb / 4P	P-Channel 100-V (D-S) MOSFET Rev. A, 22-Aug-05
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