IRF6621TR1PBF datasheet(2/10 Pages) IRF

部件名	IRF6621TR1PBF

功能描述	DirectFETPower MOSFET

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制造商	IRF [International Rectifier]

网页	http://www.irf.com

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2 / 10 page

IRF6621PbF

2

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Repetitive rating; pulse width limited by max. junction temperature.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Notes:

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

BVDSS

Drain-to-Source Breakdown Voltage

30

–––

V

∆ΒVDSS/∆TJ

Breakdown Voltage Temp. Coefficient

–––

24

––– mV/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

7.0

9.1

m

Ω

–––

9.3

12.1

VGS(th)

Gate Threshold Voltage

1.35

1.8

2.25

V

∆VGS(th)/∆TJ

Gate Threshold Voltage Coefficient

–––

-5.1

––– mV/°C

IDSS

Drain-to-Source Leakage Current

–––

1.0

µA

–––

150

IGSS

Gate-to-Source Forward Leakage

–––

100

nA

Gate-to-Source Reverse Leakage

–––

-100

gfs

Forward Transconductance

31

–––

S

Qg

Total Gate Charge

–––

11.7

17.5

Qgs1

Pre-Vth Gate-to-Source Charge

–––

3.3

–––

Qgs2

Post-Vth Gate-to-Source Charge

–––

1.0

–––

nC

Qgd

Gate-to-Drain Charge

–––

4.2

–––

Qgodr

Gate Charge Overdrive

–––

3.2

–––

See Fig. 15

Qsw

Switch Charge (Qgs2 + Qgd)

–––

5.2

–––

Qoss

Output Charge

–––

6.9

–––

nC

RG

Gate Resistance

–––

2.0

–––

Ω

td(on)

Turn-On Delay Time

–––

12

–––

tr

Rise Time

–––

14

–––

td(off)

Turn-Off Delay Time

–––

16

–––

ns

tf

Fall Time

–––

4.1

–––

Ciss

Input Capacitance

–––

1460

–––

Coss

Output Capacitance

–––

310

–––

pF

Crss

Reverse Transfer Capacitance

–––

170

–––

Diode Characteristics

Parameter

Min. Typ. Max. Units

IS

Continuous Source Current

–––

53

(Body Diode)

A

ISM

Pulsed Source Current

–––

96

(Body Diode)

g

VSD

Diode Forward Voltage

–––

0.8

1.0

V

trr

Reverse Recovery Time

–––

9.8

15

ns

Qrr

Reverse Recovery Charge

–––

10

15

nC

MOSFET symbol

Clamped Inductive Load

VDS = 15V, ID = 9.6A

Conditions

ƒ = 1.0MHz

VDS = 15V, VGS = 0V

VGS = 20V

VGS = -20V

VDS = 24V, VGS = 0V

VDS = 15V

VDS = 24V, VGS = 0V, TJ = 125°C

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 12A

i

VGS = 4.5V, ID = 9.6A

i

VDS = VGS, ID = 250µA

TJ = 25°C, IF = 9.6A

VGS = 4.5V

ID = 9.6A

VGS = 0V

VDS = 15V

ID = 9.6A

VDD = 15V, VGS = 4.5V

i

di/dt = 420A/µs

i

TJ = 25°C, IS = 9.6A, VGS = 0V

i

showing the

integral reverse

p-n junction diode.

类似零件编号 - IRF6621TR1PBF

制造商	部件名	数据表	功能描述
International Rectifier	IRF6621TRPBF	266Kb / 10P	Ideal for CPU Core DC-DC Converters

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