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BTA204X-800E 数据表(PDF) 2 Page - NXP Semiconductors

部件名 BTA204X-800E
功能描述  Three quadrant triacs guaranteed commutation
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BTA204X-800E 数据表(HTML) 2 Page - NXP Semiconductors

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BTA204X_SER_D_E_F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 3 November 2011
2 of 13
NXP Semiconductors
BTA204X series D, E and F
Three quadrant triacs guaranteed commutation
3.
Ordering information
4.
Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/
s.
Table 2.
Ordering information
Type number
Package
Name
Description
Version
BTA204X-600D
TO-220F
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 ‘full pack’
SOT186A
BTA204X-600E
BTA204X-600F
BTA204X-800E
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
BTA204X-600D
[1] -600
V
BTA204X-600E
[1] -600
V
BTA204X-600F
[1] -600
V
BTA204X-800E
-
800
V
IT(RMS)
RMS on-state current
full sine wave; Ths  92 C;
Figure 4 and Figure 5
-4
A
ITSM
non-repetitive peak on-state current
full sine wave;
Tj =25 C prior to surge;
Figure 2 and Figure 3
t = 20 ms
-
25
A
t = 16.7 ms
-
27
A
I2tI2t for fusing
t = 10 ms
-
3.1
A2S
dlT/dt
repetitive rate of rise of on-state
current after triggering
ITM =6A; IG =0.2 A;
dIG/dt = 0.2 A/s
-100
A/
s
IGM
peak gate current
-
2
A
PGM
peak gate power
-
5
W
PG(AV)
average gate power
over any 20 ms period
-
0.5
W
Tstg
storage temperature
40
+150
C
Tj
junction temperature
-
125
C


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