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IRF7413Z Datasheet(数据表) 2 Page - International Rectifier

部件型号  IRF7413Z
说明  Control FET for Notebook Processor Power
下载  10 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 

 
 2 page
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IRF7413Z
2
www.irf.com
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient –––
0.025
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
8.0
10
m
–––
10.5
13
VGS(th)
Gate Threshold Voltage
1.35
1.80
2.25
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-5.0
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
62
–––
–––
S
Qg
Total Gate Charge
–––
9.5
14
Qgs1
Pre-Vth Gate-to-Source Charge
–––
3.0
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.0
–––
nC
Qgd
Gate-to-Drain Charge
–––
3.0
–––
Qgodr
Gate Charge Overdrive
–––
2.5
–––
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
–––
4.0
–––
Qoss
Output Charge
–––
5.6
–––
nC
RG
Gate Resistance
–––
2.3
4.5
td(on)
Turn-On Delay Time
–––
8.7
–––
tr
Rise Time
–––
6.3
–––
td(off)
Turn-Off Delay Time
–––
11
–––
ns
tf
Fall Time
–––
3.8
–––
Ciss
Input Capacitance
–––
1210
–––
Coss
Output Capacitance
–––
270
–––
pF
Crss
Reverse Transfer Capacitance
–––
140
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
™
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
3.1
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
100
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
24
36
ns
Qrr
Reverse Recovery Charge
–––
16
24
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
ID = 10A
VGS = 0V
VDS = 15V
VGS = 4.5V, ID = 10A
e
VGS = 4.5V
Typ.
–––
VDS = VGS, ID = 250µA
Clamped Inductive Load
VDS = 15V, ID = 10A
VDS = 24V, VGS = 0V, TJ = 125°C
TJ = 25°C, IF = 10A, VDD = 15V
di/dt = 100A/µs
e
TJ = 25°C, IS = 10A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
MOSFET symbol
VDS = 15V, VGS = 0V
VDD = 16V, VGS = 4.5V
ID = 10A
VDS = 15V
VGS = 20V
VGS = -20V
VDS = 24V, VGS = 0V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 13A
e
Conditions
Max.
32
10
ƒ = 1.0MHz




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