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L9D3256M32SBG1 数据表(PDF) 86 Page - LOGIC Devices Incorporated |
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L9D3256M32SBG1 数据表(HTML) 86 Page - LOGIC Devices Incorporated |
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86 / 164 page  LOGIC Devices Incorporated www.logicdevices.com 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module L9D3256M32SBG1 PRELIMINARY INFORMATION L9D3512M32SBG1 Feb 11, 2013 LDS-L9D3xxxM32SBG1 High Performance, Integrated Memory Module Product FIGURE 40- EXIT WRITE LEVELING Notes: 1. The DQ result, “= 1,” between Ta0 and Tc0, is a result of the DQS, DQS# signals capturing CK HIGH just after the T0 state. NOP CK T0 T1 T2 Ta0 Tb0 Tc0 Tc1 Tc2 Td0 Td1 Te0 Te1 CK# Command ODT RTT_DQ NOP R M P O N P O N P O N P O N P O N S NOP NOP Add ress MR1 Valid Valid Valid Valid Don ’t Care Transitioning RTTDQS, RTTDQS R # TT _NOM Undefined Driving Mode t AOF (MAX) t MRD Indicates a Break in Time Scale DQS, DQS# CK = 1 DQ t IS t AOF (MIN) t MOD t WLO + tWLOE ODTL off |
类似零件编号 - L9D3256M32SBG1 |
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类似说明 - L9D3256M32SBG1 |
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