TLP785,TLP785F

2012-02-20

1

1

2

3

4

1 : Anode

2 : Cathode

3 : Emitter

4 : Collector

TOSHIBA Photocoupler GaAs IRED & Photo−Transistor

TLP785,TLP785F

Office Equipment

Household Appliances

Solid State Relays

Switching Power Supplies

Various Controllers

Signal Transmission Between Different Voltage

Circuits

The TOSHIBA TLP785 consists of a silicone phototransistor optically

coupled to a gallium arsenide (GaAs) infrared emitting diode in a four

lead plastic DIP (DIP4) with having high isolation voltage

TLP785F is a lead forming type for the long creepage surface mounting

of TLP785.

• TLP785: 7.62mm pitch type DIP4

• TLP785F: 10.16mm pitch type DIP4

• Collector-emitter voltage: 80V (min.)

• Current transfer ratio: 50% (min.)

Rank GB: 100% (min.)

• UL approved: UL1577, file No. E67349

• BSI under application: BS EN60065:2002

BS EN60950-1:2006

• SEMKO under application:EN60065:2002

EN60950-1:2001, EN60335-1:2002

• Option(D4)type

VDE approved: DIN EN60747-5-2

(Note): When an EN60747-5-2 approved type is needed,

Please designate “Option (D4)”

.

• Construction mechanical rating

7.62mm Pitch

Standard Type

10.16mm Pitch

TLPxxxF Type

Creepage distance

7.0mm(min)

8.0mm(min)

Clearance

7.0mm(min)

8.0mm(min)

Insulation thickness

0.4mm(min)

0.4mm(min)

Inner creepage distance

4.0mm(min)

4.0mm(min)

Unit: mm

TOSHIBA

11-5L1

Weight: 0.32 g (typ.)

Unit: mm

TOSHIBA

11-5L102

Weight: 0.32g (typ.)

TLP785

Pin Configurations

(top view)

TLP785F