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PZU15DB2DG 数据表(PDF) 4 Page - NXP Semiconductors

部件名 PZU15DB2DG
功能描述  Dual Zener diodes
Download  12 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

PZU15DB2DG 数据表(HTML) 4 Page - NXP Semiconductors

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PZUXDB2_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2008
4 of 12
NXP Semiconductors
PZUxDB2 series
Dual Zener diodes
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3]
Soldering points at pin 4 and pin 5.
7.
Characteristics
[1]
Pulse test: tp ≤ 300 µs; δ≤ 0.02.
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per device
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1] -
-
500
K/W
[2] -
-
455
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[3] -
-
200
K/W
Table 7.
Characteristics
Tj =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VF
forward voltage
[1]
IF = 10 mA
-
-
0.9
V
IF = 100 mA
-
-
1.1
V
Table 8.
Characteristics per type; PZU2.7DB2 to PZU24DB2 and PZU2.7DB2/DG to PZU24DB2/DG
Tj =25 °C unless otherwise specified.
PZUxDB2
PZUxDB2/DG
Working
voltage
VZ (V)
Differential resistance
rdif (Ω)
Reverse
current
IR (µA)
Temperature
coefficient
SZ (mV/K)
Diode
capacitance
Cd (pF)[1]
Non-repetitive
peak reverse
current
IZSM (A)[2]
IZ =5mA
IZ = 0.5 mA IZ =5mA
IZ =5mA
Min
Max
Max
Max
Max
VR (V) Typ
Max
Max
2.7
2.65
2.9
1000
100
20
1
−2.0
440
8
3.0
2.95
3.2
1000
95
10
1
−2.1
425
8
3.3
3.25
3.5
1000
95
5
1
−2.4
410
8
3.6
3.55
3.8
1000
90
5
1
−2.4
390
8
3.9
3.87
4.1
1000
90
3
1
−2.5
370
8
4.3
4.15
4.34
1000
90
3
1
−2.5
350
8
4.7
4.55
4.75
800
80
2
1
−1.4
325
8
5.1
4.98
5.2
250
60
2
1.5
0.3
300
5.5
5.6
5.49
5.73
100
40
1
2.5
1.9
275
5.5
6.2
6.06
6.33
80
30
0.5
3
2.7
250
5.5
6.8
6.65
6.93
60
20
0.5
3.5
3.4
215
5.5
7.5
7.28
7.6
60
10
0.5
4
4.0
170
3.5


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