数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

STP20N65M5 数据表(PDF) 4 Page - STMicroelectronics

部件名 STP20N65M5
功能描述  N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK
Download  21 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP20N65M5 数据表(HTML) 4 Page - STMicroelectronics

  STP20N65M5 Datasheet HTML 1Page - STMicroelectronics STP20N65M5 Datasheet HTML 2Page - STMicroelectronics STP20N65M5 Datasheet HTML 3Page - STMicroelectronics STP20N65M5 Datasheet HTML 4Page - STMicroelectronics STP20N65M5 Datasheet HTML 5Page - STMicroelectronics STP20N65M5 Datasheet HTML 6Page - STMicroelectronics STP20N65M5 Datasheet HTML 7Page - STMicroelectronics STP20N65M5 Datasheet HTML 8Page - STMicroelectronics STP20N65M5 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 21 page
background image
Electrical characteristics
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
4/21
Doc ID 022865 Rev 2
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
650
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 650 V
VDS = 650 V, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
± 100
nA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 9 A
0.160
0.19
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
1434
38
3.7
-
pF
pF
pF
Co(tr)
(1)
1.
Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
Equivalent
capacitance time
related
VDS = 0 to 520 V, VGS = 0
-
118
-
pF
Co(er)
(2)
2.
Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
Equivalent
capacitance energy
related
-35
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
3.5
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 9 A,
VGS = 10 V
(see Figure 18)
-
36
7.5
18
-
nC
nC
nC


类似零件编号 - STP20N65M5

制造商部件名数据表功能描述
logo
STMicroelectronics
STP20N65M5 STMICROELECTRONICS-STP20N65M5 Datasheet
1Mb / 21P
   N-channel 650 V, 0.160 廓 typ., 18 A MDmesh??V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
February 2013 Rev 2
logo
Inchange Semiconductor ...
STP20N65M5 ISC-STP20N65M5 Datasheet
318Kb / 2P
   Isc N-Channel MOSFET Transistor
More results

类似说明 - STP20N65M5

制造商部件名数据表功能描述
logo
STMicroelectronics
STF20N65M5 STMICROELECTRONICS-STF20N65M5 Datasheet
1Mb / 21P
   N-channel 650 V, 0.160 廓 typ., 18 A MDmesh??V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
February 2013 Rev 2
STF34N65M5 STMICROELECTRONICS-STF34N65M5 Datasheet
1Mb / 22P
   N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages
October 2013 Rev 3
STB57N65M5 STMICROELECTRONICS-STB57N65M5 Datasheet
1Mb / 22P
   N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET
STB45N65M5 STMICROELECTRONICS-STB45N65M5 Datasheet
1Mb / 20P
   N-channel 650 V, 0.067 ohm typ., 35 A MDmesh V Power MOSFET
STF15N65M5 STMICROELECTRONICS-STF15N65M5 Datasheet
925Kb / 17P
   N-channel 650 V, 0.308 ohm typ., 11 A MDmesh V Power MOSFET
STB24N60M2 STMICROELECTRONICS-STB24N60M2 Datasheet
1Mb / 22P
   N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK
STW45N65M5 STMICROELECTRONICS-STW45N65M5 Datasheet
1Mb / 20P
   N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages
STX42N65M5 STMICROELECTRONICS-STX42N65M5 Datasheet
1Mb / 18P
   N-channel 650 V, 0.070 ?? 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247
June 2009 Rev 3
STY139N65M5 STMICROELECTRONICS-STY139N65M5 Datasheet
971Kb / 13P
   N-channel 650 V, 0.014 廓 typ., 130 A, MDmesh??V Power MOSFET in Max247 package
STE139N65M5 STMICROELECTRONICS-STE139N65M5 Datasheet
1,021Kb / 13P
   N-channel 650 V, 0.014 (ohm) typ., 130 A, MDmesh V Power MOSFET in a ISOTOP package
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com