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STFI24N60M2 数据表(PDF) 1 Page - STMicroelectronics |
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STFI24N60M2 数据表(HTML) 1 Page - STMicroelectronics |
1 / 14 page This is information on a product in full production. May 2013 DocID024026 Rev 4 1/14 14 STF24N60M2, STFI24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP and I2PAKFP packages Datasheet − production data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. D(2) G(1) S(3) AM01476v1 TO-220FP I2PAKFP 1 2 3 1 2 3 (TO-281) Order codes VDS @ TJmax RDS(on) max ID STF24N60M2 650 V 0.19 Ω 18 A STFI24N60M2 Table 1. Device summary Order codes Marking Package Packaging STF24N60M2 24N60M2 TO-220FP Tube STFI24N60M2 I2PAKFP (TO-281) www.st.com |
类似零件编号 - STFI24N60M2 |
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类似说明 - STFI24N60M2 |
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