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74AHC1G79GW 数据表(PDF) 1 Page - NXP Semiconductors |
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74AHC1G79GW 数据表(HTML) 1 Page - NXP Semiconductors |
1 / 12 page 1. General description 74AHC1G79 and 74AHCT1G79 are high-speed Si-gate CMOS devices. They provide a single positive-edge triggered D-type flip-flop. Information on the data input is transferred to the Q output on the LOW-to-HIGH transition of the clock pulse. The D input must be stable one set-up time prior to the LOW-to-HIGH clock transition for predictable operation. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V. 2. Features I Symmetrical output impedance I High noise immunity I Low power dissipation I Balanced propagation delays I SOT353-1 and SOT753 package options I ESD protection: N HBM JESD22-A114E: exceeds 2000 V N MM JESD22-A115-A: exceeds 200 V N CDM JESD22-C101C: exceeds 1000 V I Specified from −40 °C to +125 °C 3. Ordering information 74AHC1G79; 74AHCT1G79 Single D-type flip-flop; positive-edge trigger Rev. 05 — 2 July 2007 Product data sheet Table 1. Ordering information Type number Package Temperature range Name Description Version 74AHC1G79GW −40 °C to +125 °C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1 74AHCT1G79GW 74AHC1G79GV −40 °C to +125 °C SC-74A plastic surface-mounted package; 5 leads SOT753 74AHCT1G79GV |
类似零件编号 - 74AHC1G79GW |
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类似说明 - 74AHC1G79GW |
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