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1N5401-E3 数据表(PDF) 3 Page - Vishay Siliconix |
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1N5401-E3 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Document Number: 88516 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 04-Nov-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 1N5400 thru 1N5408 Vishay General Semiconductor Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.1 10 100 1 Instantaneous Forward Voltage (V) T J = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 60 40 20 0 100 80 0.01 0.1 100 1 10 Percent of Rated Peak Reverse Voltage (%) T J = 150 °C T J = 25 °C T J = 100 °C 1 0.1 10 100 100 10 1 Reverse Voltage (V) T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p 0.1 0.01 10 1 100 100 10 1 0.1 t - Pulse Duration (s) DO-201AD 0.210 (5.3) 0.190 (4.8) DIA. 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN. 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2) |
类似零件编号 - 1N5401-E3 |
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类似说明 - 1N5401-E3 |
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