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DRV8850 数据表(PDF) 7 Page - Texas Instruments |
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DRV8850 数据表(HTML) 7 Page - Texas Instruments |
7 / 22 page DRV8850 www.ti.com SLVSCC0A – NOVEMBER 2013 – REVISED JANUARY 2014 Timing Requirements (1) TA = 25°C, VCC = 4.2 V, RL = 2 Ω PARAMETER TEST CONDITIONS MIN TYP MAX UNIT RSR connected to GND 70 ns Rise and fall time tR, tF RSR = 24 k Ω 0.7 µs (measured at OUTx) RSR = 2.4 M Ω 70 µs Propagation delay RSR connected to GND 500 ns (measured as time between RSR = 24 k Ω 750 ns tDELAY input edge to output RSR = 2.4 M Ω 50 µs change) RSR short to GND 400 ns Low-side slow decay RSR = 24 k Ω 2.6 µs LS OFF to HS ON RSR = 2.4 M Ω 110 µs RSR short to GND 400 ns Low-side slow decay RSR = 24 k Ω 2.6 µs HS OFF to LS ON RSR = 2.4 M Ω 110 µs Dead time (measured as tDEAD time OUTx FET is Hi-Z) RSR short to GND 400 ns High-side slow decay or fast decay RSR = 24 k Ω 2.6 µs HS OFF to LS ON RSR = 2.4 M Ω 110 µs RSR short to GND 600 ns High-side slow decay or fast decay RSR = 24 k Ω 3.9 µs LS OFF to HS ON RSR = 2.4 M Ω 165 µs (1) Rise and fall time measured from 10 to 90% VCC Copyright © 2013–2014, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links :DRV8850 |
类似零件编号 - DRV8850 |
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类似说明 - DRV8850 |
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