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CSD13381F4T 数据表(PDF) 1 Page - Texas Instruments |
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CSD13381F4T 数据表(HTML) 1 Page - Texas Instruments |
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1 / 9 page  D G S 0.35 mm CSD13381F4 www.ti.com SLPS448A – JULY 2013 – REVISED NOVEMBER 2013 12 V, N-Channel FemtoFET™ MOSFET Check for Samples: CSD13381F4 PRODUCT SUMMARY 1 FEATURES VDS Drain-to-Source Voltage 12 V 2 • Low On Resistance Qg Gate Charge Total (4.5V) 1060 pC • Low Qg and Qgd Qgd Gate Charge Gate to Drain 140 pC • Low Threshold Voltage VGS = 1.8V 310 RDS(on) Drain-to-Source On Resistance VGS = 2.5 V 170 m Ω • Ultra-Small Footprint (0402 Case Size) VGS = 4.5 V 140 – 1.0 mm x 0.6 mm VGS(th) Threshold Voltage 0.85 V • Ultra-Low Profile – 0.35 mm Height Text Added For Spacing • Integrated ESD Protection Diode ORDERING INFORMATION Device Qty Media Package Ship – Rated > 4 kV HBM 7-Inch – Rated > 2 kV CDM CSD13381F4 3000 Reel Femto(0402) 1.0 mm x Tape and • Pb and Halogen Free 0.6 mm SMD Lead Less Reel 7-Inch CSD13381F4T 250 Reel • RoHS Compliant Text Added For Spacing APPLICATIONS ABSOLUTE MAXIMUM RATINGS • Optimized for Load Switch Applications TA = 25°C unless otherwise stated VALUE UNIT • Optimized for General Purpose Switching VDS Drain-to-Source Voltage 12 V Applications VGS Gate-to-Source Voltage 8 V • Single-Cell Battery Applications ID Continuous Drain Current, TA = 25°C (1) 2.1 A IDM Pulsed Drain Current, TA = 25°C (2) 7 A • Handheld and Mobile Applications PD Power Dissipation(1) 500 mW Human Body Model (HBM) 4 kV DESCRIPTION ESD Rating Charged Device Model (CDM) 2 kV The FemtoFET™ MOSFET technology has been TJ, Operating Junction and Storage designed and optimized to minimize the footprint in –55 to 150 °C TSTG Temperature Range many handheld and mobile applications. This Avalanche Energy, single pulse ID = 7.4 A, technology is capable of replacing standard small EAS 2.7 mJ L = 0.1 mH, RG = 25 Ω signal MOSFETs while providing at least a 60% (1) Typical RθJA = 90°C/W on 1-inch 2 (6.45-cm2), 2-oz. (0.071- reduction in footprint size. mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. . (2) Pulse duration ≤300 μs, duty cycle ≤2% Typical Part Dimensions Top View . . 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 FemtoFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
类似零件编号 - CSD13381F4T |
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类似说明 - CSD13381F4T |
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