LF444ACN datasheet(2/18 Pages) TI1

部件名	LF444ACN

功能描述	LF444 Quad Low Power JFET Input Operational Ampli

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制造商	TI1 [Texas Instruments]

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LF444

SNOSC04D – MAY 1998 – REVISED MARCH 2013

www.ti.com

Absolute Maximum Ratings

(1) (2) (3)

LF444A

LF444

Supply Voltage

±22V

±18V

Differential Input Voltage

±38V

±30V

Input Voltage Range(4)

±19V

±15V

Output Short CircuitDuration(5)

Continuous

NAK Package

D, NFF

Packages

Power Dissipation(6)(7)

900 mW

670 mW

Tj max

150°C

115°C

θjA (Typical)

100°C/W

85°C/W

LF444A/LF444

Operating Temperature Range

See(8)

ESD Tolerance(9)

Rating to be determined

Storage Temperature Range

−65°C ≤ TA ≤ 150°C

Soldering Information

Dual-In-Line Packages (Soldering, 10 sec.)

260°C

Small Outline Package

Vapor Phase (60 sec.)

215°C

Infrared (15 sec.)

220°C

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for

which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical

specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the

Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication

of device performance.

(2)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.

(3)

Refer to RETS444X for LF444MD military specifications.

(4)

Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.

(5)

Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the

maximum junction temperature will be exceeded.

(6)

For operating at elevated temperature, these devices must be derated based on a thermal resistance of

θjA.

(7)

Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the

part to operate outside ensured limits.

(8)

The LF444A is available in both the commercial temperature range 0°C

≤ TA ≤ 70°C and the military temperature range −55°C ≤ TA ≤

125°C. The LF444 is available in the commercial temperature range only. The temperature range is designated by the position just

before the package type in the device number. A “C” indicates the commercial temperature range and an “M” indicates the military

temperature range. The military temperature range is available in “NAK” package only.

(9)

Human body model, 1.5 k

Ω in series with 100 pF.

DC Electrical Characteristics

(1)

Symbol

Parameter

Conditions

LF444A

LF444

Units

Min

Typ

Max

Min

Typ

Max

VOS

Input Offset Voltage

RS = 10k, TA = 25°C

2

5

3

10

mV

0°C

≤ TA ≤ +70°C

6.5

12

mV

−55°C ≤ TA ≤ +125°C

8

mV

ΔVOS/ΔT

Average TC of Input Offset

RS = 10 kΩ

10

μV/°C

Voltage

IOS

Input Offset Current

VS = ±15V

(1) (2)

Tj = 25°C

5

25

5

50

pA

Tj = 70°C

1.5

nA

Tj = 125°C

10

nA

IB

Input Bias Current

VS = ±15V

(1) (2)

Tj = 25°C

10

50

10

100

pA

Tj = 70°C

3

nA

Tj = 125°C

20

nA

(1)

Unless otherwise specified the specifications apply over the full temperature range and for VS = ±20V for the LF444A and for VS = ±15V

for the LF444. VOS, IB, and IOS are measured at VCM = 0.

(2)

The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature,

Tj. Due to limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation the

junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. Tj = TA + θjAPD where θjA is the

thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum.

2

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