数据搜索系统,热门电子元器件搜索 |
|
2N2907ASW35 数据表(PDF) 9 Page - STMicroelectronics |
|
2N2907ASW35 数据表(HTML) 9 Page - STMicroelectronics |
9 / 21 page DocID15382 Rev 6 9/21 2N2907AHR Radiation hardness assurance 21 3 Radiation hardness assurance(b) The products guaranteed in radiation within the JANS system fully comply with the MIL- PRF-19500/291 specification. The products guaranteed in radiation within the ESCC system fully comply with the ESCC 5202/001 and ESCC 22900 specifications. JANS radiation assurance ST JANS parts guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF- 19500 specification, specifically the Group D, subgroup 2 inspection, between 50 and 300 rad/s. A brief summary is provided below: – All test are performed in accordance to MIL-PRF-19500 and test method 1019 of MIL-STD-750 for total Ionizing dose. Each wafer of each lot is tested. The table below provides for each monitored parameters of the test conditions and the acceptance criteria b. For PNP type, voltage and current values are negative. Table 6. MIL-PRF-19500 (test method 1019) post radiation electrical characteristics Symbol Parameter Test conditions Value Unit Min. Max. I CBO Collector to base cutoff current V CB = 60 20 μA V CB = 50 V 20 nA I EBO Emitter to base cutoff current V EB = 5 V 20 μA V EB = 4 V 100 nA V (BR)CEO Breakdown voltage, collector to emitter I C = 10 mA 60 V I CES Collector to emitter cutoff current V CE = 50 V 100 nA h FE Forward-current transfer ratio V CE = 10 V; I C = 0.1 mA [37.5] (1) 1. See method 1019 of MIL-STD-750 for how to determine [h FE ] by first calculating the delta (1/h FE ) from the pre- and Post-radiation h FE . Notice the [h FE ] is not the same as h FE and cannot be measured directly. The [h FE ] value can never exceed the pre-radiation minimum h FE that it is based upon. V CE = 10 V; I C = 1.0 mA [50] (1) 400 V CE = 10 V; I C = 10 mA [50] (1) V CE = 10 V; I C = 150 mA [50] (1) 300 V CE = 10 V; I C = 500 mA [25] (1) V CE(sat) Collector-emitter saturation voltage I C = 150 mA; I B = 15 mA 0.46 V I C = 500 mA; I B = 50 mA 1.84 V BE(sat) Base-emitter saturation voltage I C = 150 mA; I B = 15 mA 0.6 1.5 V I C = 500 mA; I B = 50 mA 3 |
类似零件编号 - 2N2907ASW35 |
|
类似说明 - 2N2907ASW35 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |