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2SD1407A 数据表(PDF) 2 Page - Toshiba Semiconductor |
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2SD1407A 数据表(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page 2SD1407A 2009-07-24 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ― ― 100 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 1 mA Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 100 ― ― V hFE (1) (Note 1) VCE = 5 V, IC = 1 A 40 ― 240 DC current gain hFE (2) VCE = 5 V, IC = 4 A 20 ― ― Collector-emitter saturation voltage VCE (sat) IC = 4 A, IB = 0.4 A ― ― 2.0 V Base-emitter saturation voltage VBE VCE = 5 V, IC = 1 A ― ― 1.5 V Transition frequency fT VCE = 5 V, IC = 1 A ― 12 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 100 ― pF Note 1: hFE (1) classification R: 40 to 80, O: 70 to 140, Y: 120 to 240 Marking Note 2: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Lot No. Note 2 D1407A Characteristics indicator Part No. (or abbreviation code) |
类似零件编号 - 2SD1407A |
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类似说明 - 2SD1407A |
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