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2SA1362-GR 数据表(PDF) 2 Page - Toshiba Semiconductor |
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2SA1362-GR 数据表(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page  2SA1362 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −15 V, IE = 0 ⎯ ⎯ −100 nA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −100 nA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −15 ⎯ ⎯ V hFE (1) (Note) VCE = −1 V, IC = −100 mA 120 ⎯ 400 DC current gain hFE (2) VCE = −1 V, IC = −800 mA 40 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −400 mA, IB = −8 mA ⎯ ⎯ −0.2 V Base-emitter voltage VBE VCE = −1 V, IC = −10 mA −0.5 ⎯ −0.8 V Transition frequency fT VCE = −5 V, IC = −10 mA ⎯ 120 ⎯ MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 13 ⎯ pF Note: hFE (1) classification Y (Y): 120~240, GR (G): 200~400 ( ) marking symbol |
类似零件编号 - 2SA1362-GR |
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类似说明 - 2SA1362-GR |
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