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2SK2145-GR 数据表(PDF) 2 Page - Toshiba Semiconductor |
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2SK2145-GR 数据表(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page  2SK2145 2007-11-01 2 Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. Max Unit Gate-leakage current IGSS VGS = −30 V, VDS = 0 ⎯ ⎯ −1.0 nA Gate-drain breakdown voltage V (BR) GDS VDS = 0, IG = −100 μA −50 ⎯ ⎯ V Drain current IDSS (Note) VDS = 10 V, VGS = 0 1.2 ⎯ 14.0 mA Gate-source cut-off voltage VGS (OFF) VDS = 10 V, ID = 0.1 μA −0.2 ⎯ −1.5 V Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, VGS = 0, f = 1 kHz 4.0 15 ⎯ mS Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 13 ⎯ pF Reverse transfer capacitance Crss VDG = 10 V, ID = 0, f = 1 MHz ⎯ 3 ⎯ pF NF (1) VDS = 10 V, Rg = 1 kΩ ID = 0.5 mA, f = 10 Hz ⎯ 5 ⎯ Noise figure NF (2) VDS = 10 V, Rg = 1 kΩ ID = 0.5 mA, f = 1 kHz ⎯ 1 ⎯ dB Note 2: IDSS classification Y (Y): 1.2~3.0 mA, GR (G): 2.6~6.5 mA, BL (L): 6.0~14.0 mA ( ) Marking symbol |
类似零件编号 - 2SK2145-GR |
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类似说明 - 2SK2145-GR |
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