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ST5771-1 数据表(PDF) 1 Page - Fairchild Semiconductor |
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ST5771-1 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 2 page Discrete POWER & Signal Technologies PNP Switching Transistor ST5771-1 This device is designed for high speed saturated switching applications at currents to 100mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 15 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units ST5771-1 PD Total Device Dissipation Derate above 25 °C 350 2.8 mW mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W C B E TO-92 © 1997 Fairchild Semiconductor Corporation |
类似零件编号 - ST5771-1 |
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类似说明 - ST5771-1 |
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