Si6923DQ Rev. A (W)

Electrical Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

Drain–Source Breakdown Voltage

µA

–20

V

∆T

J

Breakdown Voltage Temperature

Coefficient

µA, Referenced to25°C

–16

mV/

°C

Zero Gate Voltage Drain Current

–1

µA

Gate–Body Leakage, Forward

–100

nA

Gate–Body Leakage, Reverse

100

nA

On Characteristics

(Note 2)

Gate Threshold Voltage

µA

–0.6

–1.0

–1.5

V

∆T

J

Gate Threshold Voltage

Temperature Coefficient

µA, Referenced to25°C

3

mV/

°C

Static Drain–Source

On–Resistance

°C

36

56

49

45

75

72

m

Ω

On–State Drain Current

–15

A

Forward Transconductance

13.2

S

Dynamic Characteristics

Input Capacitance

1015

pF

Output Capacitance

446

pF

Reverse Transfer Capacitance

f = 1.0 MHz

118

pF

Turn–On Delay Time

11

20

ns

Turn–On Rise Time

18

32

ns

Turn–Off Delay Time

34

55

ns

Turn–Off Fall Time

Ω

34

55

ns

Total Gate Charge

9.7

16

nC

Gate–Source Charge

2.2

nC

Gate–Drain Charge

2.4

nC

Drain–Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain–Source Diode Forward Current

–1.25

A

Drain–Source Diode Forward

Voltage

–0.6

–1.2

V

Gate–Body Leakage, Reverse

100

nA

Schottky Diode Characteristics

°C

0.6

50

µA

Reverse Leakage

°C

1

8

mA

°C

0.48

0.55

V

Forward Voltage

°C

0.42

0.50

V

Junction Capacitance

50

pF

Notes:

2. Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%