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SI4466 数据表(PDF) 4 Page - Fairchild Semiconductor |
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SI4466 数据表(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page Si4466DY Rev. A Typical Characteristics (continued) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA=125 o C/W TA=25 o C 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t /t 1 2 R (t) = r(t) * R R = 125°C/W θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 0 1 2 3 4 5 0 1020 3040 50 Qg, GATE CHARGE (nC) ID= 13A VDS= 5V 10V 15V 0.01 0.1 1 10 100 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) RDS(ON) Limit DC 10s 1s 100ms 10ms 1ms 100 µs VGS= 4.5V SINGLE PULSE RθJA= 125 o C/W 0 1000 2000 3000 4000 5000 6000 7000 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Ciss Coss Crss |
类似零件编号 - SI4466 |
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类似说明 - SI4466 |
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