BC817DS115 datasheet(3/7 Pages) NXP

部件名	BC817DS115

功能描述	NPN general purpose double

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制造商	NXP [NXP Semiconductors]

网页	http://www.nxp.com

标志

3 / 7 page

2002 Nov 22

3

NXP Semiconductors

Product data sheet

NPN general purpose double transistor

BC817DS

THERMAL CHARACTERISTICS

Note

1.

Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Notes

1.

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

2.

VBE decreases by approximately −2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to

ambient

note 1

208

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector-base cut-off current

VCB = 20 V; IE = 0

−

100

nA

VCB = 20 V; IE = 0; Tj = 150 °C

−

5

μA

IEBO

emitter-base cut-off current

VEB = 5 V; IC = 0

−

100

nA

hFE

DC current gain

VCE = 1 V; IC = 100 mA; note 1

160

−

400

VCE = 1 V; IC = 500 mA; note 1

40

−

VCEsat

collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1

−

700

mV

VBE

base-emitter voltage

VCE = 1 V; IC = 500 mA;

notes 1 and 2

−

1.2

V

Cc

collector capacitance

VCB = 10 V; IE = Ie = 0; f = 1 MHz

−

5

−

pF

fT

transition frequency

VCE = 5 V; IC = 10 mA;

f = 100 MHz

100

−

MHz

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