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IRFBG30PBF 数据表(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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IRFBG30PBF 数据表(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 7 page 1 Power MOSFET IRFBG30, SiHFBG30 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 55 mH, RG = 25 Ω, IAS = 3.1 A (see fig. 12). c. ISD ≤ 3.1 A, dI/dt ≤ 80 A/µs, VDD ≤ 600, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 1000 RDS(on) (Ω)VGS = 10 V 5.0 Qg (Max.) (nC) 80 Qgs (nC) 10 Qgd (nC) 42 Configuration Single N-Channel MOSFET G D S TO-220 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220 Lead (Pb)-free IRFBG30PbF SiHFBG30-E3 SnPb IRFBG30 SiHFBG30 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 1000 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 3.1 A TC = 100 °C 2.0 Pulsed Drain Currenta IDM 12 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb EAS 280 mJ Repetitive Avalanche Currenta IAR 3.1 A Repetitive Avalanche Energya EAR 13 mJ Maximum Power Dissipation TC = 25 °C PD 125 W Peak Diode Recovery dV/dtc dV/dt 1.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m www.kersemi.com |
类似零件编号 - IRFBG30PBF |
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类似说明 - IRFBG30PBF |
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