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IRF1404SPBF 数据表(PDF) 2 Page - Kersemi Electronic Co., Ltd.

部件名 IRF1404SPBF
功能描述  HEXFET짰 Power MOSFET
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制造商  KERSEMI [Kersemi Electronic Co., Ltd.]
网页  http://www.kersemi.com
标志 KERSEMI - Kersemi Electronic Co., Ltd.

IRF1404SPBF 数据表(HTML) 2 Page - Kersemi Electronic Co., Ltd.

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IRF1404S/LPbF
2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ƒ ISD ≤ 95A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
‚ Starting TJ = 25°C, L = 0.12mH
RG = 25Ω, IAS = 95A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 95A, VGS = 0V
„
trr
Reverse Recovery Time
–––
71
110
ns
TJ = 25°C, IF = 95A
Qrr
Reverse RecoveryCharge
–––
180 270
nC
di/dt = 100A/µs
„‡
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
162
†
650
A
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.036 –––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.00350.004
VGS = 10V, ID = 95A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = 10V, ID = 250µA
gfs
Forward Transconductance
106
–––
–––
S
VDS = 25V, ID = 60A
‡
–––
–––
20
µA
VDS = 40V, VGS = 0V
–––
–––
250
VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 20V
Gate-to-Source Reverse Leakage
–––
––– -200
nA
VGS = -20V
Qg
Total Gate Charge
–––
160
200
ID = 95A
Qgs
Gate-to-Source Charge
–––
35
–––
nC
VDS = 32V
Qgd
Gate-to-Drain ("Miller") Charge
–––
42
60
VGS = 10V
„‡
td(on)
Turn-On Delay Time
–––
17
–––
VDD = 20V
tr
Rise Time
–––
140
–––
ID = 95A
td(off)
Turn-Off Delay Time
–––
72
–––
RG = 2.5Ω
tf
Fall Time
–––
26
–––
RD = 0.21Ω
„‡
Between lead,
and center of die contact
Ciss
Input Capacitance
––– 7360 –––
VGS = 0V
Coss
Output Capacitance
––– 1680 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
240
–––
pF
ƒ = 1.0MHz, See Fig. 5
‡
Coss
Output Capacitance
––– 6630 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
––– 1490 –––
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
…‡
––– 1540 –––
VGS = 0V, VDS = 0V to 32V
IGSS
ns
IDSS
Drain-to-Source Leakage Current
nH
7.5
LS
Internal Source Inductance
–––
–––
‡ Use IRF1404 data and test conditions.
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
www.kersemi.com


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