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SI4190DY-T1-GE3 数据表(PDF) 4 Page - Vishay Siliconix |
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SI4190DY-T1-GE3 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 66595 S10-2686-Rev. C, 22-Nov-10 Vishay Siliconix Si4190DY New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 T J = 25 °C T J = 150 °C V SD - Source-to-Drain Voltage (V) - 0.8 - 0.6 - 0.4 - 0.2 0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 I D = 250 μA I D = 5 mA T J - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0 0.01 0.02 0.03 0.04 0.05 012 3 45 67 89 10 T J = 25 °C I D =15A T J = 125 °C V GS - Gate-to-Source Voltage (V) 0 40 80 120 160 200 10 1 1 0 0 . 0 0.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 0.01 100 1 100 0.01 0.1 10 s 10 ms 0.1 1 10 10 T A = 25 °C Single Pulse 1 ms DC BVDSS Limited 1 s 100 ms Limited by R DS(on)* V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified |
类似零件编号 - SI4190DY-T1-GE3 |
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类似说明 - SI4190DY-T1-GE3 |
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