SI7501DN-T1-E3 datasheet(1/15 Pages) VISHAY

部件名	SI7501DN-T1-E3

功能描述	Complementary 30-V (D-S) MOSFET

Download	15 Pages

Scroll/Zoom	100%

制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

标志

1 / 15 page

Vishay Siliconix

Si7501DN

Document Number: 72173

S-81544-Rev. D, 07-Jul-08

www.vishay.com

1

Complementary 30-V (D-S) MOSFET

FEATURES

•

Halogen-free Option Available

•

TrenchFET® Power MOSFET

•

New Low Thermal Resistance

•PowerPAK® Package with Low 1.07 mm

Profile

APPLICATIONS

•

Backlight Inverter

•

DC/DC Converter

- 4 Cell Battery

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

P-Channel

- 30

0.051 at VGS = - 10 V

- 6.4

0.075 at VGS = - 6 V

- 5.3

N-Channel

30

0.035 at VGS = 10 V

7.7

0.050 at VGS = 4.5 V

6.5

1

2

3

4

5

6

7

8

S1

G1

S2

G2

D

3.30 mm

PowerPAK 1212-8

Bottom View

Ordering Information: Si7501DN-T1-E3 (Lead (Pb)-free)

Si7501DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

D

G2

S2

G1

S1

P-Channel

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

P-Channel

N-Channel

Unit

10 s

Steady State

10 s

Steady State

Drain-Source Voltage

VDS

- 30

30

V

Gate-Source Voltage

VGS

± 25

± 20

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

- 6.4

- 4.5

7.7

5.4

A

TA = 70 °C

- 5.1

- 3.6

4.7

4.3

Pulsed Drain Current

IDM

- 25

25

Continuous Source Current (Diode Conduction)a

IS

- 2.6

- 1.3

2.6

1.3

Maximum Power Dissipationa

TA = 25 °C

PD

3.1

1.6

3.1

1.6

W

TA = 70 °C

31.0

21.0

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)b, c

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

32

40

°C/W

Steady State

65

81

Maximum Junction-to-Foot (Case)

Steady State

RthJC

56.3

RoHS

COMPLIANT

类似零件编号 - SI7501DN-T1-E3

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI7501DN	87Kb / 8P	Complementary 30-V (D-S) MOSFET Rev. B, 24-Nov-03
Vishay Siliconix	SI7501DN	120Kb / 9P	Complementary 30-V (D-S) MOSFET 01-Jan-2022

More results

类似说明 - SI7501DN-T1-E3

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI5504DC	65Kb / 7P	Complementary 30-V (D-S) MOSFET Rev. B, 05-Aug-02
	SI1539DL	67Kb / 7P	Complementary 30-V (D-S) MOSFET Rev. B, 12-Aug-02
	SI5504DC	125Kb / 8P	Complementary 30 V (D-S) MOSFET 18-Jul-08
	SI7501DN	120Kb / 9P	Complementary 30-V (D-S) MOSFET 01-Jan-2022
Guangdong Kexin Industr...	KI1539DL	55Kb / 2P	Complementary 30-V (D-S) MOSFET
Vishay Siliconix	SI1539DL	88Kb / 8P	Complementary 30-V (D-S) MOSFET S-21374-Rev. B, 12-Aug-02
Guangdong Kexin Industr...	KI5504DC	70Kb / 2P	Complementary 30-V (D-S) MOSFET
Vishay Siliconix	72173	87Kb / 8P	Complementary 30-V (D-S) MOSFET Rev. B, 24-Nov-03
	SI1539DL	127Kb / 8P	Complementary 30 V (G-S) MOSFET 01-Jan-2022
	SI5515DC	272Kb / 13P	Complementary 20 V (D-S) MOSFET 08-Feb-17