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SI7846DP-T1-GE3 数据表(PDF) 2 Page - Vishay Siliconix |
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SI7846DP-T1-GE3 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com 2 Document Number: 71442 S09-0537-Rev. F, 06-Apr-09 Vishay Siliconix Si7846DP Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 4.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 150 V, VGS = 0 V 1 µA VDS = 150 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 50 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 5 A 0.041 0.050 Ω Forward Transconductancea gfs VDS = 15 V, ID = 5 A 18 S Diode Forward Voltagea VSD IS = 2.8 A, VGS = 0 V 0.75 1.1 V Dynamicb Total Gate Charge Qg VDS = 75 V, VGS = 10 V, ID = 5 A 30 36 nC Gate-Source Charge Qgs 8.5 Gate-Drain Charge Qgd 8.5 Gate Resistance Rg 0.20.851.4 Ω Turn-On Delay Time td(on) VDD = 75 V, RL = 15 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 6 Ω 12 18 ns Rise Time tr 711 Turn-Off Delay Time td(off) 22 33 Fall Time tf 10 15 Source-Drain Reverse Recovery Time trr IF = 2.8 A, dI/dt = 100 A/µs 40 70 Output Characteristics 0 10 20 30 40 50 0 2468 10 VGS = 10 V thru 7 V VDS - Drain-to-Source Voltage (V) 6 V 5 V 3 V, 4 V Transfer Characteristics 0 10 20 30 40 50 012 34 567 TC = 125 °C - 55 °C 25 °C VGS - Gate-to-Source Voltage (V) |
类似零件编号 - SI7846DP-T1-GE3 |
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类似说明 - SI7846DP-T1-GE3 |
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