IRF7342TRPBF datasheet(1/7 Pages) IRF

部件名	IRF7342TRPBF

功能描述	Generation V Technology

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制造商	IRF [International Rectifier]

网页	http://www.irf.com

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HEXFET® Power MOSFET

PD - 95200

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

10/7/04

Description

l Generation V Technology

l Ultra Low On-Resistance

l Dual P-Channel Mosfet

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

SO-8

VDSS = -55V

RDS(on) = 0.105Ω

IRF7342PbF

www.irf.com

1

Parameter

Max.

Units

VDS

Drain- Source Voltage

-55

V

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

-3.4

ID @ TC = 70°C

Continuous Drain Current, VGS @ 10V

-2.7

A

IDM

Pulsed Drain Current

-27

PD @TC = 25°C

Power Dissipation

2.0

PD @TC = 70°C

Power Dissipation

1.3

Linear Derating Factor

0.016

W/°C

VGS

Gate-to-Source Voltage

± 20

V

VGSM

Gate-to-Source Voltage Single Pulse tp<10µs

30

V

EAS

Single Pulse Avalanche Energy

114

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

Parameter

Typ.

Max.

Units

RθJA

Maximum Junction-to-Ambient

–––

62.5

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

D1

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

l Lead-Free

类似零件编号 - IRF7342TRPBF

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	IRF7342TRPBF	1Mb / 9P	Dual P-Channel 6 0-V (D-S) MOSFET
TECH PUBLIC Electronics...	IRF7342TRPBF	3Mb / 5P	Dual P-Channel Enhancement Mode MOSFET

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