数据搜索系统,热门电子元器件搜索 |
|
NDS9952A 数据表(PDF) 5 Page - Fairchild Semiconductor |
|
NDS9952A 数据表(HTML) 5 Page - Fairchild Semiconductor |
5 / 13 page NDS9952A.SAM -50 -25 0 25 50 75 100 125 150 0.92 0.96 1 1.04 1.08 1.12 T , JUNCTION TEMPERATURE (°C) I = 250µA D J 0.2 0.4 0.6 0.8 1 1.2 1.4 0.001 0.01 0.1 0.5 1 5 10 V , BODY DIODE FORWARD VOLTAGE (V) T = 125°C J 25°C -55°C V = 0V GS SD 0 2 4 6 8 10 12 0 2 4 6 8 10 Q , GATE CHARGE (nC) g I = 3.7A D 20V 15V V = 10V DS 0.1 0.2 0.5 1 2 5 10 30 50 100 200 300 500 800 1000 V , DRAIN TO SOURCE VOLTAGE (V) DS C iss f = 1 MHz V = 0V GS C oss C rss Figure 7. N-Channel Breakdown Voltage Variation with Temperature. Figure 8. N-Channel Body Diode Forward Voltage Variation with Current and Temperature . Figure 9. N-Channel Capacitance Characteristics. Figure 10. N-Channel Gate Charge Characteristics. Typical Electrical Characteristics: N-Channel (continued) 0 2 4 6 8 10 0 2 4 6 8 10 I , DRAIN CURRENT (A) T = -55°C J 25°C D V =10V DS 125°C Figure 11. N-Channel Transconductance Variation with Drain Current and Temperature. |
类似零件编号 - NDS9952A |
|
类似说明 - NDS9952A |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |