IRFB16N60LPBF datasheet(6/7 Pages) KERSEMI

部件名	IRFB16N60LPBF

功能描述	Power MOSFET

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制造商	KERSEMI [Kersemi Electronic Co., Ltd.]

网页	http://www.kersemi.com

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6

IRFB16N60L, SiHFB16N60L

Fig. 13 - Threshold Voltage vs. Temperature

Fig. 14a - Maximum Avalanche Energy vs. Drain Current

Fig. 14b - Unclamped Inductive Test Circuit

Fig. 14c - Unclamped Inductive Waveforms

Fig. 15a - Basic Gate Charge Waveform

Fig. 15b - Gate Charge Test Circuit

-75

-50

-25

0

25

50

75

100 125 150 175

TJ , Temperature ( °C )

2.0

2.5

3.0

3.5

4.0

4.5

5.0

ID = 250μA

25

50

75

100

125

150

Starting TJ , Junction Temperature (°C)

0

100

200

300

400

500

600

ID

TOP

7.2A

10A

BOTTOM 16A

A

R

G

IAS

0.01

Ω

tp

D.U.T.

L

VDS

+

- VDD

Driver

15 V

20 V

IAS

VDS

tp

Q

GS

Q

GD

Q

G

VG

Charge

V

GS

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 k

Ω

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

www.kersemi.com

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