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AME8826AEHV180Z 数据表(PDF) 7 Page - Analog Microelectronics |
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AME8826AEHV180Z 数据表(HTML) 7 Page - Analog Microelectronics |
7 / 17 page AME 7 AME8826 1.55A CMOS LDO Rev.D.04 n Absolute Maximum Ratings n Recommended Operating Conditions n Thermal Information * Measure θ JC on backside center of tab. ** Measure θ JC on center of molding compound if IC has no tab. *** MIL-STD-202G210F Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device. * HBM B:2000V~3999V Parameter Package Die Attach Symbol Maximum Unit *TO-263-5 5 **SOP-8 60 TO-263-5 80 SOP-8 150 TO-263-5 1700 SOP-8 810 150 oC 350 oC Internal Power Dissipation mW Solder Iron(10 Sec)*** Conductive Epoxy oC / W Thermal Resistance (Junction to Ambient) Maximum Junction Temperature PD θ JC θ JA Thermal Resistance (Junction to Case) Parameter Maximum Unit Input Voltage -0.3 to +8 V EN, BYP Voltage -0.3 to +8 V Output Voltage -0.3 to VIN + 0.3 V Output Current PD / (VIN - VOUT) mA ESD Classification B* Parameter Symbol Rating Unit Ambient Temperature Range TA - 40 to +85 oC Junction Temperature Range TJ - 40 to +125 oC Storage Temperature Range TSTG - 65 to +150 oC |
类似零件编号 - AME8826AEHV180Z |
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类似说明 - AME8826AEHV180Z |
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