MCR01MZPJ620 datasheet(11/16 Pages) RENESAS

部件名	MCR01MZPJ620

功能描述	NPN SiGe RF Transistor for Low Noise, High-Gain

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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11 / 16 page

EVALUATION CIRCUIT EXAMPLE (f = 1.575 GHz LNA)

C1

C3

R1

L1

R3

C4

R2

L2

C2

Tr. (NESG3033M14)

GND

VCC

NESG3033M14

GPS_LNA

IN

Notes 1. 15

× 24 mm, t = 0.2 mm double sided copper clad glass epoxy PWB.

2. Au plated on pattern

3.

: Through holes

NESG3033M14

R09DS0049EJ0300 Rev.3.00

Page 11 of 14

Sep 14, 2012

类似零件编号 - MCR01MZPJ620

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Renesas Technology Corp	NESG3032M14	168Kb / 15P	NPN SiGe RF Transistor for Low Noise, High-Gain
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California Eastern Labs	NESG204619	320Kb / 4P	NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
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