MCR01MZPJ5R6 datasheet(10/16 Pages) RENESAS

部件名	MCR01MZPJ5R6

功能描述	NPN SiGe RF Transistor for Low Noise, High-Gain

Download	16 Pages

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

10 / 16 page

20

15

10

5

0

–5

50

40

10

20

30

0

–20

–10

–5

0

–15

5

Pout

IC

VCE = 3 V, f = 2 GHz

Icq = 20 mA (RF OFF)

Input Power Pin (dBm)

OUTPUT POWER, COLLECTOR

CURRENT vs. INPUT POWER

Measuring method : Measured at power matched with external sleeve tuner. (The load resistance is not inserted

between the base DC power supply and Bias Tee.)

Collector Current IC (mA)

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

4

2

1

3

0

20

5

10

15

0

1

10

100

VCE = 2 V

f = 2 GHz

Ga

NF

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the

parameters to microwave circuit simulators without the need for keyboard inputs.

Click here to download S-parameters.

[Products]

→ [RF Devices] → [Device Parameters]

URL http://www.renesas.com/products/microwave/

<R>

NESG3033M14

R09DS0049EJ0300 Rev.3.00

Page 10 of 14

Sep 14, 2012

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