PZT651 datasheet(2/4 Pages) ONSEMI

部件名	PZT651

功能描述	NPN Silicon Planar Epitaxial Transistor

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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PZT651

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CEO

60

−

Vdc

Collector−Emitter Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

80

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

−

Vdc

Base−Emitter Cutoff Current

(VEB = 4.0 Vdc)

IEBO

−

0.1

mAdc

Collector−Base Cutoff Current

(VCB = 80 Vdc, IE = 0)

ICBO

−

100

nAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 50 mAdc, VCE = 2.0 Vdc)

(IC = 500 mAdc, VCE = 2.0 Vdc)

(IC = 1.0 Adc, VCE = 2.0 Vdc)

(IC = 2.0 Adc, VCE = 2.0 Vdc)

hFE

75

40

−

Collector−Emitter Saturation Voltages

(IC = 2.0 Adc, IB = 200 mAdc)

(IC = 1.0 Adc, IB = 100 mAdc)

VCE(sat)

−

0.5

0.3

Vdc

Base−Emitter Voltages

(IC = 1.0 Adc, VCE = 2.0 Vdc)

VBE(on)

−

1.0

Vdc

Base−Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 100 mAdc)

VBE(sat)

−

1.2

Vdc

Current−Gain — Bandwidth

(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

fT

75

−

MHz

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%

类似零件编号 - PZT651

制造商	部件名	数据表	功能描述
ON Semiconductor	PZT651T1	101Kb / 6P	HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT 1996 REV 1
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