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PZTA55 数据表(PDF) 2 Page - Fairchild Semiconductor |
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PZTA55 数据表(HTML) 2 Page - Fairchild Semiconductor |
2 / 13 page Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 m A, IB = 0 60 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 4.0 V ICEO Collector-Cutoff Current VCE = 60 V, IB = 0 0.1 µA ICBO Collector-Cutoff Current VCB = 60 V, IE = 0 0.1 µA ON CHARACTERISTICS hFE DC Current Gain IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V 100 100 VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA 0.25 V VBE(on) Base-Emitter On Voltage IC = 100 mA, VCE = 1.0 V 1.2 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 100 mA, VCE = 1.0 V, f = 100 MHz 50 MHz *Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0% PNP General Purpose Amplifier (continued) |
类似零件编号 - PZTA55 |
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类似说明 - PZTA55 |
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