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PSMN1R5-40PS 数据表(PDF) 2 Page - NXP Semiconductors

部件名 PSMN1R5-40PS
功能描述  NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)
Download  8 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

PSMN1R5-40PS 数据表(HTML) 2 Page - NXP Semiconductors

  PSMN1R5-40PS Datasheet HTML 1Page - NXP Semiconductors PSMN1R5-40PS Datasheet HTML 2Page - NXP Semiconductors PSMN1R5-40PS Datasheet HTML 3Page - NXP Semiconductors PSMN1R5-40PS Datasheet HTML 4Page - NXP Semiconductors PSMN1R5-40PS Datasheet HTML 5Page - NXP Semiconductors PSMN1R5-40PS Datasheet HTML 6Page - NXP Semiconductors PSMN1R5-40PS Datasheet HTML 7Page - NXP Semiconductors PSMN1R5-40PS Datasheet HTML 8Page - NXP Semiconductors  
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NextPower MOSFETs - Visit us at www.nxp.com/mosfets
NextPower 25 V & 30 V MOSFETs
in LFPAK (Power-SO8)
NXP introduces a range of high performance
N-channel, logic-level MOSFETs in LFPAK
As a power design engineer, compromise is never far from your mind. Do I choose a low R
DS(on) device and accept the
higher output capacitance? Do I demand the lowest gate charge characteristics to reduce switching losses but then find
that the package options are no longer ideal in my application?
The NextPower range of MOSFETs from NXP provides uniquely balanced characteristics across the six most important
parameters essential for your latest high efficiency and high reliability designs. More performance, less compromise…
Many competitors focus only on optimising R
DS(on) and Qg. As Qg gets lower then losses due to Qoss and Qgd become
more significant. NextPower uses Superjunction technology to provide the optimum balance between low R
DS(on), low
Q
oss, low Qg(tot) and Qgd to give optimum switching performance. NextPower delivers superior SOA performance, and
low Q
oss reduces the losses between the output DRAIN & SOURCE terminals. NextPower also delivers the lowest RDS(on)
with sub 1 mΩ types at both 25 V and 30 V.
LFPAK packaging provides rugged power switching on a compact 5 mm x 6 mm footprint compatible with other
Power-SO8 vendors. The unique benefits of LFPAK make it the best package choice for demanding applications or where
high-reliability is required. It also allows for visual inspection, reducing the need for costly X-ray equipment to detect
solder defects as is common with QFN style Power-SO8 packages.
Key benefits
} High efficiency in power switching applications
} Industry’s lowest R
DS(on) Power-SO8 - Less than 1 mΩ
at 25 V and 30 V
} Low Q
oss for reduced output losses between DRAIN &
SOURCE
} Low Q
gd for reduced switching losses and high frequency
switching
} 20 V rated GATE provides better tolerance to voltage
transients than lateral MOSFET types
} Superior ‘Safe Operating Area’ performance compared
to other Trench MOSFET vendors
} Optimised for 4.5 V gate drive voltage
} Optimum switching performance under light & heavy
load conditions
} LFPAK package for compatibility with other vendor
Power-SO8 types
} Eliminates costly X-ray inspection – LFPAK solder joints
can be optically inspected
Key applications
} Synchronous buck regulators
} DC-DC conversion
} Voltage regulator modules (VRM)
} Power OR-ing


类似零件编号 - PSMN1R5-40PS

制造商部件名数据表功能描述
NXP Semiconductors
NXP Semiconductors
PSMN1R5-40PS NXP-PSMN1R5-40PS Datasheet
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Nexperia B.V. All right...
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   N-channel 40 V 1.6 mΩ standard level MOSFET in TO220
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类似说明 - PSMN1R5-40PS

制造商部件名数据表功能描述
NXP Semiconductors
NXP Semiconductors
PSMN3R8-30LL PHILIPS-PSMN3R8-30LL Datasheet
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PSMN1R5-30YLC PHILIPS-PSMN1R5-30YLC_15 Datasheet
355Kb / 15P
   N-channel 30 V 1.55m廓 logic level MOSFET in LFPAK using NextPower technology
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PSMN3R2-30YLC PHILIPS-PSMN3R2-30YLC_15 Datasheet
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PSMN9R0-25YLC NXP-PSMN9R0-25YLC Datasheet
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   N-channel 25 V 1.9 m廓 logic level MOSFET in LFPAK using NextPower technology
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